Method of producing silicon thin film, method of constructing SOI substrate and semiconductor device

• US 6,653,209 B1
• Filed: 09/28/2000
• Issued: 11/25/2003
• Est. Priority Date: 09/30/1999
• Status: Active Grant

• Current Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Original Assignee: Canon Ayutthaya Limited (Canon Inc.)
• Inventors: Yamagata, Kenji
• Primary Examiner(s): TRINH, MICHAEL MANH
• Application Number:
  US09/671,857
• Time in Patent Office: 1,153 Days
• Field of Search: 438/753, 438/459, 438/455, 438/458, 438/480, 117/97, 117/2
• US Class Current: 438/459
• CPC Class Codes: H01L 21/02052 Wet cleaning only H01L21/02085 takes precedence
• CPC Class Codes: H01L 21/30604 Chemical etching
• CPC Class Codes: H01L 21/76243 using silicon implanted buried insulating layers, e.g. oxide layers, i.e. SIMOX techniques
• CPC Class Codes: H01L 21/76259 with separation/delamination along a porous layer

Abstract

To decrease the thickness of a silicon thin film to a desired value without deterioration of the quality thereof while avoiding the surface roughness due to speed increasing oxidation of crystal defect portions occurring when conducting the conventional sacrificial oxidation, effect of dust particles, etc. and also avoiding deterioration of high pressure resistance of the oxide film associated with the surface roughness. A silicon ultrathin film SOI layer is produced in the following two steps: preparing a SOI wafer having a silicon thin film, which exhibits less precipitation of oxygen, thereon by the SIMOX method or the semiconductor bonding method, and cleaning the SOI wafer with an alkali solution such as SC1 and TMAH, so as to utilize the etching action of the aqueous cleaner.

Claims

1. A method for producing a silicon thin film provided on an insulating surface, which comprises the steps of:

preparing the silicon thin film at a thickness larger than 100 nm on the insulating surface;

heat-treating the silicon thin film in a reducing atmosphere containing hydrogen; and

wet-cleaning the heat-treated silicon thin film to decrease the thickness of the silicon thin film to 100 nm or less.

2. The method for producing a silicon thin film according to claim 1, wherein the thickness of the silicon thin film is decreased to 50 nm or smaller by the wet-cleaning.

3. The method for producing a silicon thin film according to claim 1, wherein the silicon thin film is prepared from an epitaxially grown film.

4. The method for producing a silicon thin film according to claim 1, wherein the silicon thin film is prepared from a hydrogen annealed silicon.

5. The method for producing a silicon thin film according to claim 1, wherein the silicon thin film is prepared from a FZ silicon wafer.

6. The method for producing a silicon thin film according to claim 1, wherein the wet-cleaning is performed using an SC1 aqueous cleaner or an organic alkali solution.

7. The method for producing a silicon thin film according to claim 1, wherein the etch rate by the wet-cleaning is 0.1 nm/min or higher and 10 nm/min or lower.

8. The method for producing a silicon thin film according to claim 1, wherein the silicon thin film is subjected to the wet-cleaning treatment without being subjected to thermal oxidation.

9. The method for producing a silicon thin film according to claim 1, wherein the silicon thin film comprises a silicon thin film in which oxygen content is lower than that of a CZ wafer.

10. The method for producing a silicon thin film according to claim 1, wherein the wet-cleaning is performed using a cleaner containing ammonia and hydrogen peroxide.

11. A method for fabricating a SOI substrate which comprises the steps of:

preparing a substrate having a silicon thin film larger than 100 nm in thickness on an insulating surface;

heat-treating said substrate in a reducing atmosphere containing hydrogen; and

wet-cleaning the heat-treated substrate so as to decrease the thickness of said silicon thin film to 100 nm or less.

12. The method for fabricating a SOI substrate according to claim 11, wherein the substrate is prepared by a process which comprises the steps of:

forming a composite member by bonding a first substrate comprising a porous layer and a silicon thin film formed thereon to a second substrate via an insulating layer; and

separating said composite member by the porous layer.

13. The method for fabricating a SOI substrate according to claim 11, wherein the substrate is prepared by a process comprising the steps of:

forming a composite member by bonding a first substrate, which comprises an ion implanted layer and a silicon thin film formed thereon, to a second substrate via an insulating layer; and

separating said composite member at the ion implanted layer.

14. The method for fabricating a SOI substrate according to claim 13, wherein the first substrate is formed by a process comprising a step of implanting hydrogen ions in the given regions of a silicon wafer.

15. The method for fabricating a SOI substrate according to claim 11, wherein the substrate is prepared by a process which comprises the step of implanting oxygen ions into a silicon wafer.

16. The method for fabricating a SOI substrate according to claim 11, wherein the thickness of the silicon thin film is decreased to 50 mn or smaller by the wet-cleaning.

17. A method for producing a semiconductor device comprising a step of forming an active region of transistor in the silicon thin film according to claim 11.