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Radio frequency (RF) power devices having faraday shield layers therein

  • US 6,653,691 B2
  • Filed: 11/05/2001
  • Issued: 11/25/2003
  • Est. Priority Date: 11/16/2000
  • Status: Expired due to Term
First Claim
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1. An integrated power device, comprising:

  • a plurality of field effect transistor cells in an active portion of a semiconductor substrate;

    a Faraday shield layer extending on a portion of the semiconductor substrate that is located outside a perimeter of the active portion;

    a gate electrode that is electrically connected to each gate of said plurality of field effect transistor cells and extends outside the perimeter of the active portion in a manner that substantially confines it to within an outer perimeter of said Faraday shield layer;

    an intermediate electrically insulating layer disposed between said Faraday shield layer and said gate electrode; and

    a source electrode that is electrically coupled to each source of said plurality of field effect transistor cells and to said Faraday shield layer.

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