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Magnetoresistance random access memory

  • US 6,654,278 B1
  • Filed: 07/31/2002
  • Issued: 11/25/2003
  • Est. Priority Date: 07/31/2002
  • Status: Expired due to Fees
First Claim
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1. A magnetoresistive tunneling junction memory cell comprising:

  • an electrically insulating material designed to form a magnetoresistive tunneling barrier;

    a bit magnetic region positioned on one side of the electrically insulating material, the bit magnetic region having a bit magnetic moment that has a polarity in a bit easy axis when there is no applied magnetic field;

    a reference magnetic region positioned on an opposite side of the electrically insulating material, wherein the electrically insulating material and the bit and reference magnetic regions form a magnetoresistive tunneling junction device (MTJD); and

    means for inducing an applied magnetic field in the bit and reference magnetic regions;

    wherein the reference magnetic region has a low aspect ratio and has a reference magnetic moment that is substantially orthogonal to the bit easy axis when the applied magnetic field has a magnitude of zero, at which magnitude the MTJD has a reference magnetoresistance, and wherein the polarity of the bit magnetic moment is reliably indicated by a sign of a change of the magnetoresistance of the MTJD from a rotation of the reference magnetic moment, and the polarity of the bit magnetic moment is not switched, when the applied magnetic field has a sense value that is within a non-switching magnetic field region.

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