Semiconductor device manufacturing apparatus having rotatable gas injector and thin film deposition method using the same
First Claim
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1. A semiconductor device manufacturing apparatus comprising:
- a reaction chamber provided with a gas-exhausting outlet for exhausting an inner gas;
a susceptor-supporting die horizontally arranged within the reaction chamber;
at least one susceptor installed on the susceptor-supporting die, on which a wafer is mounted;
a cylinder vertically coupled to an upper outer wall of the reaction chamber, the cylinder having a plurality of ring-shaped grooves formed along an inner wall thereof, each of the ring-shaped grooves being connected to a plurality of gas injection holes formed so as to penetrate a side wall of the cylinder;
a rotational shaft closely contacted with the inner wall of the cylinder, rotatably inserted in the cylinder, vertically inserted within the reaction chamber, having multiple gas supply tubes arranged parallel to a length direction thereof, one end of each of the gas supply tubes communicating with the ring-shaped groove; and
a propeller type gas injector having horizontally radially branched tubes connected with the gas supply tubes at an insertion end of the rotational shaft, the branched tubes each having multiple injection holes, the propeller type gas injector being horizontally rotated by a rotational movement of the rotational shaft.
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Abstract
Disclosed is a semiconductor device manufacturing apparatus provided with a rotational gas injector for supplying source gases at an upper portion of a reaction chamber. According to the invention, source gases are injected from the upside of the wafers through the rotational type gas injector, and non-reacted gases are exhausted into the downside space of the wafers, so that lowering in the thickness uniformity of a thin film due to the horizontal flow of source gases provided in the conventional art decrease remarkably. Accordingly, although multiple wafers are loaded in a single reaction chamber, a thin film having very high thickness uniformity can be deposited with respect to all the wafers, thereby capable of enhancing the productivity.
45 Citations
11 Claims
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1. A semiconductor device manufacturing apparatus comprising:
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a reaction chamber provided with a gas-exhausting outlet for exhausting an inner gas;
a susceptor-supporting die horizontally arranged within the reaction chamber;
at least one susceptor installed on the susceptor-supporting die, on which a wafer is mounted;
a cylinder vertically coupled to an upper outer wall of the reaction chamber, the cylinder having a plurality of ring-shaped grooves formed along an inner wall thereof, each of the ring-shaped grooves being connected to a plurality of gas injection holes formed so as to penetrate a side wall of the cylinder;
a rotational shaft closely contacted with the inner wall of the cylinder, rotatably inserted in the cylinder, vertically inserted within the reaction chamber, having multiple gas supply tubes arranged parallel to a length direction thereof, one end of each of the gas supply tubes communicating with the ring-shaped groove; and
a propeller type gas injector having horizontally radially branched tubes connected with the gas supply tubes at an insertion end of the rotational shaft, the branched tubes each having multiple injection holes, the propeller type gas injector being horizontally rotated by a rotational movement of the rotational shaft. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
mounting a wafer on the susceptor; and
rotating the rotational shaft while injecting a gas through the multiple gas injection holes.
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Specification
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Current AssigneeJusung Engineering Company Limited
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Original AssigneeJusung Engineering Company Limited
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InventorsPark, Chang Soo, Hwang, Chul Ju, Shim, Kyung Sik
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Primary Examiner(s)Smith, Matthew
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Assistant Examiner(s)YEVSIKOV, VICTOR V
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Application NumberUS10/187,090Time in Patent Office522 DaysField of Search438/680, 438/782, 438/622, 438/623, 438/758, 438/759, 438/760, 438/761, 438/778, 438/780, 438/781, 438/790, 427/240, 427/255.3, 427/255.2, 118/503, 118/715, 118/723.E, 118/730, 118/724, 428/131, 257/744, 257/746US Class Current118/715CPC Class CodesC23C 16/45574 Nozzles for more than one gasC23C 16/45578 Elongated nozzles, tubes wi...C23C 16/45589 Movable means, e.g. fansH01J 37/3244 Gas supply meansY10T 428/24273 including aperture
