Nonstick layer for a micromechanical component
First Claim
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1. A method for manufacturing a micromechanical component, comprising:
- producing, on a sacrificial layer, a movable element by patterning an upper layer;
producing a metallization layer on the upper layer, wherein the metallization layer is not applied to the sacrificial layer;
removing a portion of the sacrificial layer beneath the moveable element, so that the movable element becomes movable;
subsequent to removing the portion of the sacrificial layer, producing a protective layer on the movable element and the metallization layer, wherein an adhesive force of the movable element is reduced by the protective layer; and
removing the protective layer from the metallization layer.
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Abstract
A method for manufacturing micromechanical components, and a micromechanical component, in which a movable element is produced on a sacrificial layer. In a subsequent step the sacrificial layer beneath the movable element is removed so that the movable element becomes movable. After removal of the sacrificial layer, a protective layer is deposited on a surface of the movable element. Silicon oxide and/or silicon nitride is used for the protective layer.
12 Citations
7 Claims
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1. A method for manufacturing a micromechanical component, comprising:
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producing, on a sacrificial layer, a movable element by patterning an upper layer;
producing a metallization layer on the upper layer, wherein the metallization layer is not applied to the sacrificial layer;
removing a portion of the sacrificial layer beneath the moveable element, so that the movable element becomes movable;
subsequent to removing the portion of the sacrificial layer, producing a protective layer on the movable element and the metallization layer, wherein an adhesive force of the movable element is reduced by the protective layer; and
removing the protective layer from the metallization layer. - View Dependent Claims (2, 3, 4, 5, 6, 7)
producing the protective layer on a surface of a stationary element.
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3. The method according to claim 1, wherein the protective layer includes at least one of silicon oxide and silicon nitride.
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4. The method according to claim 1, wherein the sacrificial layer comprises silicon oxide and is arranged on a silicon substrate.
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5. The method according to claim 1, wherein the removing of the sacrificial layer is accomplished by etching with hydrofluoric acid.
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6. The method according to claim 1, further comprising:
joining a cap to at least one of the protective layer and the upper layer, wherein the cap encapsulates the movable element.
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7. The method according to claim 1, wherein the producing of the protective layer is accomplished by at least one of a chemical vapor deposition out of a gas phase, a plasma-enhanced chemical vapor deposition out of a gas phase, and oxidation.
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