Thin film forming method and apparatus

• US 6,656,518 B2
• Filed: 09/30/2002
• Issued: 12/02/2003
• Est. Priority Date: 10/14/1999
• Status: Expired due to Term

• Current Assignee: Hoya Corporation
• Original Assignee: Hoya Corporation
• Inventors: Takahashi, Yukihiro, Shinde, Kenichi
• Primary Examiner(s): Hassanzadeh, Parviz
• Application Number:
  US10/259,635
• Publication Number:
  US 20030029382A1
• Time in Patent Office: 428 Days
• Field of Search: 427/10, 427/566, 427/8, 427/9, 356/448, 356/230, 356/229, 118/723.EB, 118/723.VE, 118/723.CB, 118/723.FE, 118/723.FI, 118/726, 118/712, 118/708, 118/665, 118/695, 118/696, 118/697, 156/626.1
• US Class Current: 427/10
• CPC Class Codes: C23C 14/547 using optical methods

Abstract

To provide a thin film forming method and apparatus that can automatically form thin films having constant optical properties with high reproducibility Antireflection films are deposited on lenses 2a that are held by a coating dome 2 by vaporizing an evaporation material 4 by using an electron gun 3 The power to be applied to the electron gun 3 is controlled so that a transmission or reflection light quantity value that is measured at each time point by an optical film thickness meter 10 becomes equal or approximately equal to a standard light quantity value stored in a standard light quantity value data storing means

Claims

1. A thin film forming method, comprising steps of:

forming a thin film of a substance on an object by deposition by vaporizing the substance;

measuring of a thickness of the thin film deposited on the object during deposition using an optical film thickness meter to measure light quantity values of transmission or reflection, wherein the optical film thickness meter measures the thickness of a thin film using the light quantity value of transmission or reflection when a prescribed light is applied to the object on which the thin film is formed, and wherein the light quantity value depends on the thickness of the thin film; and

;

controlling the vaporizing with a controller using the signals from said optical film thickness meter, by comparing actual light quantity value variation versus time with stored standard light quantity value variations over time measured when a film is formed on a standard object.

2. A thin film forming method of claim 1, wherein said controller controls an amount of the substance vaporized, so that a light quantity value of transmission or reflection measured per unit time by said optical film thickness meter becomes equal or approximately equal to a standard light quantity value.

3. The thin film forming method of claim 2, wherein said vaporizing is performed by an electron gun for heating the substance and causing the substance to vaporize.

4. The thin film forming method of claim 3, wherein said standard variation of light quantity value is a variation of light quantity value of transmission or reflection versus time measured by the optical film thickness meter when a standard film formation is performed.

5. The thin film forming method of claim 3, wherein said step of controlling comprises supplying said electron gun with power Pi determined versus time by performing a PID (proportion, integration, and differentiation) control for Qi using following equation:

6. The thin film forming method of claim 3, wherein said step of controlling comprises supplying said electron gun with power so that Ri which is defined by

7. The thin film forming method of claim 3, wherein said step of controlling comprises supplying said electron gun with power so that Ri becomes equal or approximately equal to zero and using PID (proportion, integration, and differentiation) control, wherein the PID control controls a current value (Pi) of the electron gun according to a following PID control equation:

$\underset{i}{\sum <br><br>}<br><br>R_i\equiv <br><br>R_1+R_2+R_3+\mathrm{\dots <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i$$d<br><br>\text{\hspace{1em}<br><br>}<br><br>e<br><br>\text{\hspace{1em}<br><br>}<br><br>t<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i\equiv <br><br>R_i-R_{i-1}.$

wherein Ri is defined as;

Ri≡

Is_i−

Ii, wherein Ii (units of %) is a light quantity value at a film formation time ti as measured from the start of the film formation and Is_i (units of %) is a light quantity value at a corresponding time point ti of the standard light quantity data, wherein i is defined as an ith control operation;

wherein Kp, Ki, and Kd are arbitrary constants; and

wherein $P_i\equiv <br><br>P_{i-1}+K_p·<br><br>R_i+K_i·<br><br>\underset{i}{\sum <br><br>}<br><br>R_i+K_d·<br><br>d<br><br>\text{\hspace{1em}<br><br>}<br><br>e<br><br>\text{\hspace{1em}<br><br>}<br><br>t<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i$

9. The thin film forming method of claim 3, said substance comprises Ta₂O₅, ZrO₂, Y₂O₃, and Al₂O₃.

10. The thin film forming method of claim 2, wherein said standard light quantity value is a light quantity value of transmission or reflection versus time measured by the optical film thickness meter when a standard film formation is performed.

11. A thin film forming method of claim 1, wherein said controller controls an amount of the substance vaporized, wherein a variation in light quantity value of transmission or reflection measured per unit time by said optical film thickness meter becomes equal or approximately equal to a standard variation of light quantity value.

12. The thin film forming method of claim 11, wherein said vaporizing is performed by an electron gun for heating the substance and causing the substance to vaporize.

13. The thin film forming claim 12, wherein said standard variation of light quantity value is a variation of light quantity value of transmission or reflection versus time measured by the optical film thickness meter when a standard film formation is performed.

14. The thin film forming method of claim 12, wherein said step of controlling comprises supplying said electron gun with power Pi determined versus time by performing a PID (proportion, integration, and differentiation) control for Qi using following equation:

15. The thin film forming method of claim 12, wherein said step of controlling comprises supplying said electron gun with power so that Ri which is defined by

16. The thin film forming method of claim 12, wherein said step of controlling comprises supplying said electron gun with power so that Ri becomes equal or approximately equal to zero and using PID (proportion, integration, and differentiation) control, wherein the PID control controls a current value (Pi) of the electron gun according to a following PID control equation:

$P_i\equiv <br><br>P_{i-1}+K_p·<br><br>R_i+K_i·<br><br>\underset{i}{\sum <br><br>}<br><br>R_i+K_d·<br><br>d<br><br>\text{\hspace{1em}<br><br>}<br><br>e<br><br>\text{\hspace{1em}<br><br>}<br><br>t<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i$

wherein Ri is defined as;

Ri≡

Is_i−

Ii, wherein Ii (units of %) is a light quantity value at a film formation time ti as measured from the start of the film formation and Is_i (units of %) is a light quantity value at a corresponding time point ti of the standard light quantity data, wherein i is defined as an ith control operation;

wherein Kp, Ki, and Kd are arbitrary constants; and

wherein $\underset{i}{\sum <br><br>}<br><br>R_i\equiv <br><br>R_1+R_2+R_3+\mathrm{\dots <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i$$d<br><br>\text{\hspace{1em}<br><br>}<br><br>e<br><br>\text{\hspace{1em}<br><br>}<br><br>t<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i\equiv <br><br>R_i-R_{i-1}.$

17. The thin film forming method of claim 12, wherein said substance comprises ZrO₂.

18. The thin film forming method of claim 12, wherein said substance comprises Ta₂O₅, ZrO₂, Y₂O₃, and Al₂O₃.

19. The thin film forming method of claim 11, wherein said standard variation of light quantity value is a variation of light quantity value of transmission or reflection versus time measured by the optical film thickness meter when a standard film formation is performed.

20. The thin film forming method of claim 1, wherein said vaporizing is performed by an electron gun for heating the substance and causing the substance to vaporize.

21. The thin film forming method of claim 20, wherein said step of controlling comprises supplying said electron gun with power Pi determined versus time by performing a PID (proportion, integration, and differentiation) control for Qi using following equation:

22. The thin film forming method of claim 20, wherein said step of controlling comprises supplying said electron gun with power so that Ri which is defined by

23. The thin film forming method of claim 20, wherein said step of controlling comprises supplying said electron gun with power so that Ri becomes equal or approximately equal to zero and using PID (proportion, integration, and differentiation) control, wherein the PID control controls a current value (Pi) of the electron gun according to a following PID control equation:

$P_i\equiv <br><br>P_{i-1}+K_p·<br><br>R_i+K_i·<br><br>\underset{i}{\sum <br><br>}<br><br>R_i+K_d·<br><br>d<br><br>\text{\hspace{1em}<br><br>}<br><br>e<br><br>\text{\hspace{1em}<br><br>}<br><br>t<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i$

wherein Ri is defined as;

Ri≡

Is_i−

I_i, wherein Ii (units of %) is a light quantity value at a film formation time ti as measured from the start of the film formation and Is_i (units of %) is a light quantity value at a corresponding time point ti of the standard light quantity data, wherein i is defined as an ith control operation;

wherein Kp, Ki, and Kd are arbitrary constants; and

wherein $\underset{i}{\sum <br><br>}<br><br>R_i\equiv <br><br>R_1+R_2+R_3+\mathrm{\dots <br><br>}<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i$$d<br><br>\text{\hspace{1em}<br><br>}<br><br>e<br><br>\text{\hspace{1em}<br><br>}<br><br>t<br><br>\text{\hspace{1em}<br><br>}<br><br>R_i\equiv <br><br>R_i-R_{i-1}.$

24. The thin film forming method of claim 20, wherein said substance comprises ZrO₂.

25. The thin film forming method of claim 20, wherein said substance comprises Ta₂O₅, ZrO₂, Y₂O₃, and Al₂O₃.

8. The thin film forming method of 3, wherein said substance comprises ZrO₂.