Method for forming a semiconductor device for detecting light

• US 6,656,761 B2
• Filed: 11/21/2001
• Issued: 12/02/2003
• Est. Priority Date: 11/21/2001
• Status: Expired due to Term

• Current Assignee: VLSI Technology LLC (FIG LLC (d/b/a Fortress Investment Group LLC))
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Fowler, Burt W., Csutak, Sebastian M.
• Primary Examiner(s): Zarabian, Zamir Amir
• Assistant Examiner(s): Soward, Ida M.
• Application Number:
  US09/990,977
• Publication Number:
  US 20030096440A1
• Time in Patent Office: 741 Days
• Field of Search: 438/72, 438/97, 438/48, 438/7, 438/31-32, 438/57
• US Class Current: 438/57
• CPC Class Codes: H01L 31/02161 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/0232 Optical elements or arrangements associated with the device H01L31/0236 takes precedence; for photovoltaic cells H01L31/054; for photovoltaic modules H02S40/20
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/102 characterised by only one potential barrier
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof

Abstract

A method of forming a resonant cavity device useful for optoelectronic applications is disclosed. A monocrystalline top semiconductor substrate is wafer bonded to a mirror formed over or within a bottom semiconductor substrate. A top mirror is formed over or within the top semiconductor substrate.

Claims

1. A method for forming a semiconductor device for detecting light, the method comprising:

providing a semiconductor substrate;

forming a first reflective stack overlying the semiconductor substrate;

wafer bonding a semiconductor layer to the first reflective stack wherein the semiconductor layer overlies the first reflective stack;

forming a plurality of electrodes within a top portion of the semiconductor layer; and

forming an inlaid second reflective stack within the semiconductor layer and overlying the plurality of electrodes.

2. The method of claim 1, wherein each of the first and second reflective stacks comprises a first reflective layer having a first refraction index and a second reflective layer having a second refraction index, the second refraction index being greater than the first refraction index.

3. The method of claim 2, wherein the first reflective layer of the first reflective stack comprises an oxide, and the second reflective layer of the first reflective stack comprises a polycrystalline material.

4. The method of claim 1, wherein the semiconductor substrate comprises silicon and the semiconductor layer comprises monocrystalline silicon.

5. The method of claim 4, wherein each of the first and second reflective stacks comprises at least two layers of alternating materials having different refraction indices.

6. The method of claim 5, wherein one of the at least two alternating layers of the first reflective stack comprises an element selected from a group consisting of silicon and nitrogen, and another one of the at least two alternating layers of the first reflective stack comprises oxygen.

7. The method of claim 1, wherein the first reflective stack, second reflective stack, and semiconductor layer form a resonant cavity.

8. The method of claim 1, wherein the silicon-containing layer is wafer bonded to the reflective stack prior to forming a transistor within the silicon-containing substrate.

9. The method of claim 1, wherein the forming a plurality of electrodes is performed after the wafer bonding.