Semiconductor apparatus having semiconductor circuits made of semiconductor devices, and method of manufacture thereof

• US 6,656,779 B1
• Filed: 09/28/1999
• Issued: 12/02/2003
• Est. Priority Date: 10/06/1998
• Status: Expired due to Term

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Kasahara, Kenji
• Primary Examiner(s): COLEMAN, WILLIAM D
• Application Number:
  US09/406,793
• Time in Patent Office: 1,526 Days
• Field of Search: 438/166, 438/486, 438/150
• US Class Current: 438/166
• CPC Class Codes: H01L 27/1296 adapted to increase the uniformity of device parameters
• CPC Class Codes: H01L 29/4908 for thin film semiconductor, e.g. gate of TFT
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78603 characterised by the insulating substrate or support H01L29/78657 takes precedence
• CPC Class Codes: H01L 29/78621 with LDD structure or an extension or an offset region or characterised by the doping profile

Abstract

A semiconductor device comprises a first insulating film provided over a substrate and heat-treated, a second insulating film provided over the first insulating film, and a semiconductor film provided over the second insulating film, the second insulating film and the semiconductor film being formed successively without exposing them to the atmosphere.

Claims

1. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film; and

crystallizing the semiconductor film to form a crystalline semiconductor film,

wherein the step of forming the second insulating film and the semiconductor film is conducted after performing the step of heat-treating the first insulating film.

2. A method according to claim 1, wherein the second insulating film is formed smaller in thickness than the first insulating film.

3. A method according to claim 1, wherein the first insulating film is heat-treated at a temperature of 200-700°

C.

14. A method according to claim 1, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

21. A method according to claim 1, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

28. A method according to claim 1, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

35. A method according to claim 1, wherein the formation of the first insulating film is conducted using TEOS and oxygen.

42. A method according to claim 1, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

49. A method according to claim 1, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

56. A method according to claim 1, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

4. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;

introducing into at least a part of the semiconductor film an element for accelerating crystallization; and

crystallizing the semiconductor film to form a crystalline semiconductor film,

wherein the step of forming the second insulating film and the semiconductor film is conducted after performing the step of heat-treating the first insulating film.

5. A method according to claims 4, wherein the second insulating film is formed smaller in thickness than the first insulating film.

6. A method according to claim 4, wherein the first insulating film is heat-treated at a temperature of 200-700°

C.

15. A method according to claim 4, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

22. A method according to claim 4, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

29. A method according to claim 4, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

36. A method according to claim 4, wherein the formation of the first insulating film is conducted using TEOS and oxygen.

43. A method according to claim 4, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

50. A method according to claim 4, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

57. A method according to claim 4, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

7. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film;

introducing into at least a part of the semiconductor film an element for accelerating crystallization;

crystallizing the semiconductor film to form a crystalline semiconductor film; and

removing the element by gettering,

wherein the step of forming the second insulating film and the semiconductor film is conducted after performing the step of heat-treating the first insulating film.

8. A method according to claim 7, wherein the second insulating film is formed smaller in thickness than the first insulating film.

9. A method according to claim 7, wherein the first insulating film is heat-treated at a temperature of 200-700°

C.

16. A method according to claim 7, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

23. A method according to claim 7, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

30. A method according to claim 7, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

37. A method according to claim 7, wherein the formation of the first insulating film is conducted using TEOS and oxygen.

44. A method according to claim 7, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

45. A method according to claim 16, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

51. A method according to claim 7, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

58. A method according to claim 7, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

10. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film; and

crystallizing the semiconductor film to form a crystalline semiconductor film,

wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step, and

wherein the second insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

17. A method according to claim 10, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

24. A method according to claim 10, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

31. A method according to claim 10, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

38. A method according to claim 10, wherein the formation of the first insulating film is conducted using TEOS and oxygen.

52. A method according to claim 10, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

59. A method according to claim 10, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

11. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film; and

crystallizing the semiconductor film to form a crystalline semiconductor film,

wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step, and

wherein the first insulating film comprises a material selected from the group consisting of silicon nitride, silicon oxynitride and silicon oxide.

18. A method according to claim 11, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

25. A method according to claim 11, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

32. A method according to claim 11, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

39. A method according to claim 11, wherein the formation of the first insulating film is conducted using TEOS and oxygen.

46. A method according to claim 11, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

53. A method according to claim 11, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

60. A method according to claim 11, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

12. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film with a surface of the first insulating film being exposed to the atmosphere after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film; and

crystallizing the semiconductor film to form a crystalline semiconductor film,

wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step.

19. A method according to claim 12, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

26. A method according to claim 12, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

33. A method according to claim 12, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

40. A method according to claim 12, herein the formation of the first insulating film is conducted using TEOS and oxygen.

47. A method according to claim 12, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

54. A method according to claim 12, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

61. A method according to claim 12, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.

13. A method of manufacturing a semiconductor device comprising:

forming a first insulating film over a substrate;

heat-treating the first insulating film after performing the step of forming the first insulating film;

successively forming over the first insulating film a second insulating film and a semiconductor film in laminated layers without exposing them to the atmosphere, the semiconductor film being formed over the second insulating film; and

crystallizing the semiconductor film by irradiating the semiconductor film with a laser light having an output pulse width of 100 nsec or more to form a crystalline semiconductor film,

wherein the forming step of the second insulating film and the semiconductor film is conducted after performing the heat-treating step.

20. A method according to claim 13, wherein the heat-treating of the first insulating film is conducted at a temperature of 200 to 700°

C.

27. A method according to claim 13, wherein the formation of the second insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

34. A method according to claim 13, wherein the formation of the first insulating film is conducted by a means selected from the group consisting of a thermal CVD, a plasma CVD, a sputter, an evaporator and a reduced pressure thermal CVD.

41. A method according to claim 13, wherein the formation of the first insulating film is conducted using TEOS and oxygen.

48. A method according to claim 13, wherein the formation of the second insulating film is conducted using TEOS and oxygen.

55. A method according to claim 13, wherein said semiconductor device is incorporated into a circuit selected from the group consisting of a pixel matrix circuit, a scan line drive circuit, a signal line drive circuit, a D/A converter, a γ

correction circuit, a signal dividing circuit, an RISC processor and an ASIC processor.

62. A method according to claim 13, wherein said semiconductor device is incorporated into at least one of a personal computer, a video camera, a mobile computer, a goggle type display, a player using a recording medium, a digital camera, a cellular phone, and an electronic book.