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Transistor having variable width gate electrode and method of manufacturing the same

  • US 6,656,808 B2
  • Filed: 09/05/2001
  • Issued: 12/02/2003
  • Est. Priority Date: 09/05/2000
  • Status: Expired due to Fees
First Claim
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1. A transistor comprising:

  • a substrate;

    a gate electrode formed on a horizontal surface of said substrate, said gate electrode having an upper portion and a lower portion, wherein a vertical side-wall of said lower portion is concave, and wherein a horizontal width of said upper portion is greater than a horizontal width of said lower portion;

    a spacer formed on a side wall of said gate electrode from said upper portion to said lower portion thereof;

    a first impurity doped region formed at an upper portion of said substrate; and

    a second impurity doped region underlying said first impurity doped region, wherein said second impurity doped region has an impurity concentration higher than said first impurity doped region, and wherein said second impurity doped region is narrower than said first impurity doped region.

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