Method for manufacturing a semiconductor device having a reliable thinning step

• US 6,656,820 B2
• Filed: 11/08/2001
• Issued: 12/02/2003
• Est. Priority Date: 11/08/2000
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Liu, Yi
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): Roman, Angel
• Application Number:
  US09/986,372
• Publication Number:
  US 20020123210A1
• Time in Patent Office: 754 Days
• Field of Search: 438/458, 438/459, 438/460, 438/464, 438/465
• US Class Current: 438/460
• CPC Class Codes: H01L 21/6836 Wafer tapes, e.g. grinding or dicing support tapes adhesive tapes in general C09J7/20
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2221/68327 used during dicing or grinding
• CPC Class Codes: H01L 2221/68336 involving stretching of the auxiliary support post dicing

Abstract

The present invention relates to a method for manufacturing a semiconductor device from a step of thinning a semiconductor device substrate to a step of dicing it, and a semiconductor device. The method for manufacturing a semiconductor device substrate of the present invention is characterized by carrying out a series of processes from a step of uniformly thinning a whole surface of a semiconductor device substrate to a step of back-metal plating, while the semiconductor device substrate is unified with a dummy substrate. Therefore, the present invention allows a semiconductor device to be manufactured without breaking the thinned semiconductor device substrate even after the thinned substrate is separated from the dummy substrate.

Claims

1. A method for manufacturing a semiconductor device, which comprises:

a step of bonding a semiconductor device substrate to a dummy substrate with a heat foamable adhesive sheet to unify them,

a step of thinning the semiconductor device substrate while it is unified with the dummy substrate, and

a step of dicing the semiconductor substrate after removing it from the dummy substrate, wherein the semiconductor device substrate is fixed to the dummy substrate by bonding a heat foamable-adhesive side of the heat foamable adhesive sheet directly to a device side of the semiconductor device substrate, and by bonding a normal adhesive side of the heat foamable adhesive sheet to the dummy substrate.

2. The method for manufacturing a semiconductor device according to claim 1, which further comprises a step of fixing the semiconductor device substrate unified with the dummy substrate to a pedestal support prior to the step of thinning.

3. The method for manufacturing a semiconductor device according to claim 1, which further comprises a step of back-metal plating the semiconductor device substrate while it is unified with the dummy substrate.

4. The method for manufacturing a semiconductor device according to claim 3, wherein a temperature for heat-foaming the heat foamable adhesive sheet is higher than a temperature of the substrate during the step of back-metal plating.

5. The method for manufacturing a semiconductor device according to claim 3, wherein an uneven surface of the substrate which has been thinned in the step of thinning is mirror-polished prior to the step of back-metal plating so that a maximum difference of a thickness within the uneven surface is 0.2 μ

m or less.

6. The method for manufacturing a semiconductor device according to claim 5, wherein the mirror-polished surface is treated by etching.

7. The method for manufacturing a semiconductor device according to claim 3, wherein the step of back-metal plating the semiconductor device substrate comprises attaching a power feeding metal and, then, plating a metal.

8. The method for manufacturing a semiconductor device according to claim 3, wherein the step of dicing the semiconductor device substrate comprises bonding the semiconductor device substrate to a foaming surface of the heat foamable adhesive sheet, bonding a dicing sheet to an opposite surface of the heat foamable adhesive sheet and, then, dicing them halfway in the dicing sheet.

9. The method for manufacturing a semiconductor device according to claim 8, wherein the diced semiconductor device substrate is peeled off from the dicing sheet while it is unified with the heat foamable adhesive sheet and, then, the semiconductor device substrate is separated from the heat foamable adhesive sheet by heating.

10. The method for manufacturing a semiconductor device according to claim 1, wherein the semiconductor device substrate is a compound semiconductor substrate.

11. The method for manufacturing a semiconductor device according to claim 1, wherein the dummy substrate is a substrate selected from a group consisting of a silicone wafer, a glass plate, a ceramic plate and a metal plate.