Method for the selective removal of high-k dielectrics

• US 6,656,852 B2
• Filed: 12/06/2001
• Issued: 12/02/2003
• Est. Priority Date: 12/06/2001
• Status: Active Grant

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Chambers, James Joseph, Rotondaro, Antonio Luis Pacheco
• Primary Examiner(s): GHYKA, ALEXANDER G
• Application Number:
  US10/006,081
• Publication Number:
  US 20030109106A1
• Time in Patent Office: 726 Days
• Field of Search: 438/287, 438/745, 438/749, 438/753, 134/1.3, 134/26
• US Class Current: 438/749
• CPC Class Codes: H01L 21/28194 by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition H01L21/28202 takes precedence
• CPC Class Codes: H01L 21/31111 by chemical means
• CPC Class Codes: H01L 29/51 Insulating materials associated therewith for MIS structures on thin film semiconductor H01L29/4908
• CPC Class Codes: H01L 29/517 the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate H01L29/518 takes precedence
• CPC Class Codes: H01L 29/518 the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material

Abstract

One aspect of the invention relates to a method of etching a high-k dielectric. The method involves removing an exposed portion of a high-k dielectric layer from a substrate by wet etching with a solution comprising water, a strong acid, an oxidizing agent, and a fluorine compound. The etching solution provides selectivity towards the high-k film against insulating materials and polysilicon and is therefore useful in manufacturing FETs.

Claims

1. A method of removing an exposed portion of a high-k dielectric layer from a substrate, comprising:

providing a substrate with a high-k dielectric layer;

wet etching with a final etching solution consisting essentially of water, a strong acid, an oxidizing agent, and a fluorine compound;

wherein the strong acid is not the same as the fluorine compound.

2. The method of claim 1, wherein the high-k dielectric layer is at least about 1 nm thick.

3. The method of claim 1, wherein the strong acid is sulfuric acid.

4. The method of claim 1, wherein the oxidizing agent is hydrogen peroxide.

5. The method of claim 1, wherein the fluorine compound is hydrofluoric acid.

6. The method of claim 1, wherein the strong acid is sulfuric acid, oxidizing agent is hydrogen peroxide, and the fluorine compound is hydrofluoric acid.

7. The method of claim 1, further comprising etching with a first etching solution to remove a bulk portion of the exposed portion of the high-k dielectric prior to wet etching with the final etching solution, wherein the first etching solution is different from the final etching solution.

8. The method of claim 7, wherein the first wet etching solution consists essentially of dilute hydrofluoric acid.

9. The method of claim 1, wherein the substrate comprises islands of oxide insulator.

10. The method of claim 9, wherein the islands of oxide insulator comprise a material selected from the group consisting of silicon oxide, TEOS and a combination thereof.

11. The method of claim 1, wherein the high-k dielectric comprises a silicate.

12. The method of claim 1, wherein the high-k dielectric comprises a metal oxide.

13. The method of claim 1, wherein the high-k dielectric comprises an aluminate.

14. The method of claim 1, wherein the high-k dielectric comprises an metal oxynitride or a metal-silicon oxynitride.

15. The method of claim 1, wherein the substrate comprises a polysilicon layer patterned over a layer of the high-k dielectric.

16. The method of claim 1, wherein the substrate comprises a silicon wafer.

17. A method of manufacturing a field effect transistor, comprising:

forming isolation regions;

forming a gate layer comprising a high-k dielectric;

forming a poly layer;

patterning the poly layer; and

patterning the gate layer;

wherein

the gate layer is patterned using a process according to claim 1.

18. A method of etching high-k dielectric, comprising:

providing high-k dielectric material;

etching with a first solution comprising a first strong acid to remove a bulk portion of the high-k dielectric;

etching with a second solution comprising water, a second strong acid, an oxidizing agent, and a fluorine compound to remove a second portion of the high-k dielectric;

wherein the first solution is not the same as the second solution, the second strong acid is not the same as the fluorine compound, and the second portion of the high-k dielectric is at least {fraction (1/10)}th the thickness of the bulk potion of the high-k dielectric.

19. The method of claim 18, wherein the second strong acid is sulfuric acid and the oxidizing agent is hydrogen peroxide.

20. The method of claim 19, wherein the fluorine compound is hydrofluoric acid.

21. The method of claim 20, wherein the first strong acid is hydrofluoric acid.

22. The method of claim 18, wherein etching with the second solution is performed at a temperature of about 60°

C. or more and about 140°

C. or less.

23. A method of etching through a high-k dielectric layer of at least 1 nm thickness, comprising:

providing a high-k dielectric layer of at least 1 nm thickness;

wet etching the layer with a solution comprising by volume at least about 25 percent sulfuric acid, at least about 1 percent hydrogen peroxide, and at least about 0.005 percent hydrofluoric acid.