Trench DMOS device with improved drain contact

• US 6,657,255 B2
• Filed: 10/30/2001
• Issued: 12/02/2003
• Est. Priority Date: 10/30/2001
• Status: Expired due to Term

• Current Assignee: General Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Original Assignee: General Semiconductor, Inc. (Vishay Intertechnology Incorporated)
• Inventors: Hshieh, Fwu-Iuan, So, Koon Chong, Nelson, William John, Amato, John E.
• Primary Examiner(s): Cao, Phat X.
• Application Number:
  US10/021,419
• Publication Number:
  US 20030080351A1
• Time in Patent Office: 763 Days
• Field of Search: 257/341, 257/330, 257/332, 257/329, 257/331
• US Class Current: 257/330
• CPC Class Codes: H01L 29/0653 adjoining the input or output region of a field-effect device, e.g. the source or drain region
• CPC Class Codes: H01L 29/41741 for vertical or pseudo-vertical devices
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7809 having both source and drain contacts on the same surface, i.e. Up-Drain VDMOS transistors
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402
• CPC Class Codes: H01L 29/7813 with trench gate electrode, e.g. UMOS transistors trench gate electrodes per se H01L29/4236

Abstract

A trench DMOS transistor device that comprises: (a) a substrate of a first conductivity type; (b) an epitaxial layer of first conductivity type over the substrate, wherein the epitaxial layer has a lower majority carrier concentration than the substrate; (c) a trench extending into the epitaxial layer from an upper surface of the epitaxial layer; (d) an insulating layer lining at least a portion of the trench; (e) a conductive region within the trench adjacent the insulating layer; (f) a body region of a second conductivity type provided within an upper portion of the epitaxial layer and adjacent the trench; (g) a source region of first conductivity type within an upper portion of the body region and adjacent the trench; and (h) one or more low resistivity deep regions extending into the device from an upper surface of the epitaxial layer. The low resistivity deep region acts to provide electrical contact with the substrate, which is a common drain region for the device. By constructing a trench DMOS transistor device in this fashion, source, drain and gate contacts can all be provided on a single surface of the device.

Claims

1. A trench DMOS transistor device comprising:

a substrate of a first conductivity type, said substrate acting as a common drain region for said device;

an epitaxial layer of said first conductivity type over said substrate, said epitaxial layer having a lower majority carrier concentration than said substrate;

a trench extending into said epitaxial layer from an upper surface of said epitaxial layer;

an insulating layer lining at least a portion of said trench;

a conductive region within said trench adjacent said insulating layer;

a body region of a second conductivity type provided within an upper portion of said epiraxial layer and adjacent said trench;

a source region of said first conductivity type within an upper portion of said body region and adjacent said trench;

a low resistivity deep region extending into said device from an upper surface of said epitaxial layer, said low resistivity deep region acting to provide electrical contact with said substrate; and

a metallic drain contact adjacent an upper surface of said deep region, a metallic source contact adjacent an upper surface of said source region, and a metallic gate contact adjacent an upper surface of said conductive region in a termination region remote from said source region.

2. The trench DMOS transistor device of claim 1, wherein said low resistivity deep region has a resistivity of 0.01 Ohm-cm or less and extends at least 20% of the distance from said upper surface of said epitaxial layer to said substrate.

3. The trench DMOS transistor device of claim 1, wherein said deep region comprises a semiconductor region of said first conductivity type.

4. The trench DMOS transistor device of claim 3, wherein said deep region extends all the way to said substrate.

5. The trench DMOS transistor device of claim 1, wherein said deep region comprises a metallic region.

6. The trench DMOS transistor device of claim 5, wherein said metallic region comprises aluminum.

7. The trench DMOS transistor device of claim 5, wherein said deep region extends all the way to said substrate.

8. The trench DMOS transistor device of claim 1, wherein said deep region comprises a doped polysilicon region.

9. The trench DMOS transistor device of claim 8, wherein said deep region extends all the way to said substrate.

10. The trench DMOS transistor device of claim 1, wherein a plurality of deep regions is provided within said device.

11. The trench DMOS transistor device of claim 1, wherein said device comprises a plurality of transistor cells of square geometry or hexagonal geometry.

12. The trench DMOS transistor device of claim 1, wherein said trench DMOS transistor device is a silicon device.

13. The trench DMOS transistor device of claim 1, wherein said first insulating layer is an oxide layer.

14. The trench DMOS transistor device of claim 1, wherein the conductive region is a doped polycrystalline silicon region.

15. The trench DMOS transistor device of claim 1, wherein said first conductivity type is N-type conductivity and said second conductivity type is P-type conductivity.

16. The trench DMOS transistor device of claim 1, wherein said substrate is an N+ substrate, said epitaxial layer is an N epitaxial layer, said body region is a P region, and said source region is an N+ region.