Sensor cell

• US 6,657,269 B2
• Filed: 12/20/2001
• Issued: 12/02/2003
• Est. Priority Date: 12/22/2000
• Status: Active Grant

• Current Assignee: Cambridge University (Government of United Kingdom), Seiko Epson Corporation (Seiko Group)
• Original Assignee: Seiko Epson Corporation (Seiko Group)
• Inventors: Bavidge, Nathan, Lowe, Christopher, Migliorato, Piero
• Primary Examiner(s): JACKSON JR, JEROME
• Application Number:
  US10/022,232
• Publication Number:
  US 20020117694A1
• Time in Patent Office: 712 Days
• Field of Search: 257/414, 257/71
• US Class Current: 257/414
• CPC Class Codes: G01N 27/27 Association of two or more measuring systems or cells, each measuring a different parameter, where the measurement results may be either used independently, the systems or cells being physically associated, or combined to produce a value for a further parameter
• CPC Class Codes: G01N 27/4145 specially adapted for biomolecules, e.g. gate electrode with immobilised receptors
• CPC Class Codes: G01N 27/4148 Integrated circuits therefor, e.g. fabricated by CMOS processing CMOS processing per se H01L21/82

Abstract

A sensor cell comprises receiving means, which may be in the form of an electrode 10 coupled to the gate electrode of a thin film transistor T1. In one form of the invention a voltage supplied to the gate electrode of the transistor T1 via a switching transistor T7 is controlled in dependence upon the value of capacitance C_A arising at the electrode from receipt of a sample for identification. Thus, the operation of transistor T1 can be used to identify the sample received by the electrode 10.

Claims

1. A sensor cell comprising a thin film transistor, a reference capacitor coupled to a gate electrode of the thin film transistor, a sample electrode coupled to the gate electrode of the thin film transistor and arranged to receive a sample for identification, the reference capacitor and the sample electrode providing in combination, a capacitance divider circuit coupled to the gate electrode of the thin film transistor, a further transistor for affording a voltage pulse to the gate electrode of the thin film transistor, the voltage pulse having an amplitude arranged to maintain the thin film transistor in a non-conducting condition and to bias the thin film transistor to a point on its operating characteristic where it is ready to switch from the non-conducting condition to a conducting condition;

and means for providing an excitation pulse to the gate electrode of the thin film transistor via the capacitance divider circuit, thereby to switch the thin film transistor from the non-conducting condition at the point on its operating characteristic to a conducting condition, whereby in use of the sensor cell, the output current of the thin film transistor is dependent upon the value of capacitance at the sample electrode arising from receiving the sample for identification.

4. A sensor cell as claimed in claim 1, wherein the reference capacitor comprises the gate electrode and a buried region underlaying a metal layer extending into contact with the gate electrode and separated from the metal layer by an insulator layer.

5. A sensor cell as claimed in claim 4, wherein the buried region comprises metal or doped polysilicon.

7. A sensor cell as claimed in claim 1, wherein the further transistor comprises a thin film transistor.

11. A sensor cell as claimed in claim 1, comprising a threshold voltage compensation circuit including a constant current source for providing a preset level of current through the thin film transistor and switching means for selectively coupling the constant current source to the thin film transistor.

12. A sensor cell as claimed in claim 11 comprising an additional transistor coupled to the thin film transistor, the arrangement being such that when the voltage pulse is provided to the gate electrode of the thin film transistor and the constant current source is decoupled from the thin film transistor, the magnitude of an output current from the thin film transistor will change from a first level determined by the constant current source to a second level dependent upon the value of capacitance arising at the sample electrode.

13. A sensor cell as claimed in claim 12 comprising means for determining the change between the first and second levels of the output current from the thin film transistor.

14. A sensor cell as claimed in claim 11, wherein the switching means comprises a thin film transistor switching circuit.

15. A sensor cell as claimed in claim 1, wherein the receiving means comprises gold, silver or platinum.

16. A sensor cell as claimed in claim 1, wherein the receiving means is arranged in a position offset from the thin film transistor, the arrangement being such that the sample is received by the receiving means in a position which does not overlie a gate region of the thin film transistor.

17. A sensor cell as claimed in claim 1, wherein the receiving means comprises a well portion arranged in a passivation layer overlying the thin film transistor thereby to provide a layer of passivation material overlying a metal layer extending into contact with the gate electrode, the layer of passivation material having a thickness such that an electric charge arising in the well portion from receipt by the well portion of the sample for identification creates a voltage at the gate electrode of the thin film transistor indicative of the sample.

18. A sensor cell as claimed in claim 1, wherein the sensor cell comprises a plastics or glass substrate.

19. A sensor comprising an array of rows and columns of sensor cells as claimed in claim 1.

20. A sensor as claimed in claim 19 comprising a row select register for selecting the rows of sensor cells of the array and a column select register for selecting the columns of sensor cells of the array.

21. A sensor as claimed in claim 19 comprising amplification means for amplifying output signals from the sensor cells.

22. A sensor as claimed in claim 19 comprising multiplexing means for multiplexing output signals from the sensor cells.

23. A sensor as claimed in claim 19 comprising storage means for storing reference values indicative of reference samples, comparator means for comparing the reference values with output signals from sensor cells and display means arranged to indicate whether a sample for identification matches a reference sample.

24. A sensor as claimed in claim 19, wherein each sensor cell comprises a reference electrode, and wherein a plurality of reference electrodes disposed in spaced relationship throughout the array are arranged to carry a common reference substance, and the sensor further comprises circuit means for receiving and averaging output signals from those sensor cells including one of the plurality of reference electrodes carrying the common reference substance.

34. A chemical sensor comprising a sensor cell as claimed in claim 1.

35. Fingerprint recognition apparatus comprising a sensor cell as claimed in claim 1.

2. A sensor cell comprising a thin film transistor, a sample electrode coupled to the gate electrode of the thin film transistor and arranged to receive a sample for identification, a switching transistor coupled to the gate electrode of the thin film transistor and arranged to switch between a non-conducting condition and a conducting condition to enable a voltage to be selectively provided to the grate electrode of the thin film transistor for selectively switching the thin film transistor between a non-conducting condition and conducting condition, thereby when the switching transistor is switched to the non-conducting condition, the voltage provided at the gate electrode of the thin film transistor is arranged to decrease in magnitude in a time dependent manner and thereby cause the thin film transistor to switch from a conducting to a non-conducting condition, the time taken between the switching of the switching transistor and the switching of the thin film transistor between their respective conducting and non-conducting conditions being dependent upon the value of capacitance at the sample electrode.

9. A sensor cell as claimed in claim 2 comprising a select line for providing a select pulse to a gate electrode of the switching transistor for switching the switching transistor between its conducting and non-conducting conditions.

10. A sensor cell as claimed in claim 9 comprising a preset line for providing the voltage to the gate electrode of the thin film transistor and a read line for providing a read voltage to the thin film transistor, the arrangement being such that a preset cycle is enabled by providing the select pulse to the switching transistor so as to switch the switching transistor to its conducting condition and enable the voltage to be provided to the gate electrode of the thin film transistor, and wherein a read cycle is enabled by terminating the select pulse, thereby the voltage at the gate electrode of the thin film transistor decreases in the time dependent manner in dependence upon the value of capacitance at the sample electrode.

42. A sensor comprising an array of rows and columns of sensor cells as claimed in claim 2.

46. A chemical sensor comprising a sensor cell as claimed in claim 2.

47. Fingerprint recognition apparatus comprising a sensor cell as claimed in claim 2.

3. A method of identifying a sample comprising applying the sample to a sensor cell having a sample electrode arranged in combination with a reference capacitor as a capacitance divider circuit coupled to a gate electrode of a thin film transistor, providing a voltage pulse to the gate electrode of the thin film transistor when in a non-conducting condition, the voltage pulse being arranged to have a magnitude such that the thin film transistor remains in the non-conducting condition and is biased to a point on its operating characteristic where it is ready to switch from the non-conducting condition to a conducting condition, and providing an excitation pulse to the gate electrode of the thin film transistor via the capacitance divider circuit, thereby to switch the thin film transistor from the non-conducting condition at the point on its operating characteristic to the conducting condition, and measuring the output current of the thin film transistor in the conducting condition.

6. A method as claimed in claim 3, comprising providing the sample electrode in a position offset from the thin film transistor such that the sample is received by the receiving means in a position which does not overlie a gate region of the thin film transistor.

8. A method as claimed in claim 3, comprising providing the reference capacitor as a buried region underlying a metal layer extending into contact with the gate electrode and separated from the metal layer by an insulator layer.

25. A method as claimed in claim 8 comprising providing the buried region as a region of metal or doped polysilicon.

26. A method as claimed in claim 3 comprising providing a threshold voltage compensation circuit including a constant current source for providing a preset level of current through the thin film transistor, and switching means for selectively coupling the constant current source to the thin film transistor.

27. A method as claimed in claim 26 comprising coupling an additional transistor to the thin film transistor, providing the voltage pulse to the gate electrode of the thin film transistor and decoupling the constant current source from the thin film transistor thereby to change the magnitude of the output current from the thin film transistor from a first level determined by the constant current source to a second level dependent upon the value of capacitance arising at the sample electrode.

28. A method as claimed in claim 3, wherein the sample electrode is provided as a well portion arranged in a passivation layer overlying the thin film transistor so as to provide a layer of passivation material overlying a metal layer extending into contact with the gate electrode, the layer passivation material having a thickness such that an electric charge arising in the well portion from receipt by the well portion of the sample for identification creates a voltage at the gate electrode of the thin film transistor indicative of the sample.

29. A method as claimed in claim 3, comprising fabricating the sensor cell on a plastics or a glass substrate.

30. A method as claimed in claim 3 comprising providing a plurality of sensor cells arranged as an array of rows and columns of sensor cells.

31. A method as claimed in claim 30 comprising providing a row select register for selecting the rows of sensor cells in the array and a column select register for selecting the columns of sensor cells of the array.

32. A method as claimed in claim 30 comprising providing amplification means for amplifying output signals from the sensor cells.

33. A method as claimed in claim 30 comprising providing multiplexing means for multiplexing output signals from the sensor cells.

36. A method of operating a biosensor comprising a method as claimed in claim 3.

37. A method of operating fingerprint recognition apparatus comprising a method as claimed in claim 3.

38. A method of identifying a sample comprising applying the sample to a sensor cell having a sample electrode for receiving the sample, a thin film transistor having a gate electrode coupled to the sample electrode, and a switching transistor coupled to the gate electrode and arranged to switch between a non-conducting and a conducting condition, the method comprising providing a voltage to the gate electrode of the thin film transistor by switching the switching transistor to its conducting condition thereby to place the thin film transistor in a conducting condition, switching the switching transistor from its conducting condition to its non-conducting condition, thereby to cause the voltage provided to the gate electrode of the thin film transistor to decrease in magnitude in a time dependent manner and cause the thin film transistor to switch from the conducting condition to a non-conducting condition, the time taken between the switching of the switching transistor and the switching of the thin film transistor between their respective conducting and non-conducting conditions being dependent upon the value of capacitance at the sample electrode.

39. A method as claimed in claim 38 comprising supplying the switching transistor as a thin film transistor.

40. A method as claimed in claim 38, wherein the switching transistor is switched between the non-conducting and conducting conditions by providing a select pulse from a select line to the switching transistor.

41. A method as claimed in claim 40 comprising providing a preset line for providing the voltage to the gate electrode of the thin film transistor, a read line for providing a read voltage to the thin film transistor, enabling a preset cycle by providing the select pulse to the switching transistor, thereby to switch the switching transistor to a conducting condition to provide the voltage to the gate electrode of the thin film transistor, and enabling a read cycle by terminating the select pulse thereby to switch the switching transistor to the non-conducting condition, whereby the voltage at the gate electrode of the thin film transistor changes in magnitude, thereby to switch the thin film transistor to a non-conducting condition, the time taken between the termination of the select pulse and switching of the thin film transistor to the non-conducting condition being dependent upon the value of capacitance at the sample electrode.

43. A method as claimed in claim 38 comprising providing a threshold voltage compensation circuit including a constant current source for providing a preset level of current through the thin film transistor, and switching means for selectively coupling the constant current source to the thin film transistor.

44. A method as claimed in claim 38, comprising fabricating the sensor cell on a plastics or a glass substrate.

45. A method as claimed in claim 38, comprising providing a plurality of sensor cells arranged as an array of rows and columns of sensor cells.

48. A method of operating a biosensor comprising a method as claimed in claim 38.

49. A method of operating fingerprint recognition apparatus comprising a method as claimed in claim 38.