Notch filter circuit apparatus

• US 6,657,518 B1
• Filed: 06/06/2002
• Issued: 12/02/2003
• Est. Priority Date: 06/06/2002
• Status: Expired due to Term

• Current Assignee: Raytheon Company (Rtx Corporation)
• Original Assignee: Raytheon Company (Rtx Corporation)
• Inventors: Smith, Matthew C., Weller, Thomas M., Culver, James W.
• Primary Examiner(s): Tokar, Michael
• Assistant Examiner(s): Mai, Lam T.
• Application Number:
  US10/164,949
• Time in Patent Office: 544 Days
• Field of Search: 333/202, 333/204, 333/33, 333/189, 333/133, 257/453, 257/76, 257/751, 257/245, 385/129, 385/14, 385/131
• US Class Current: 333/204
• CPC Class Codes: H01P 1/2013 Coplanar line filters

Abstract

According to one embodiment of the invention, a notch filter circuit includes a coplanar waveguide that includes a silicon substrate and at least one shunt stub bent at an angle to the coplanar waveguide. The notch filter circuit also includes at least one capacitor bridging at least one discontinuity of the shunt stub.

Claims

1. A notch filter circuit apparatus, comprising:

a coplanar waveguide located on a silicon-substrate;

at least one shunt stub; and

at least one capacitor bridging a discontinuity of the at least one shunt stub.

2. The apparatus of claim 1, wherein the coplanar waveguide is comprised of a plurality of chromium-silver-chromium-gold metal layers.

3. The apparatus of claim 1, wherein the silicon substrate comprises a high-resistivity silicon substrate.

4. The apparatus of claim 1, wherein the at least one shunt stub is comprised of a plurality of chromium-silver-chromium-gold metal layers.

5. The apparatus of claim 1, wherein the at least one shunt stub is bent at an angle to the coplanar waveguide.

6. The apparatus of claim 1, wherein the at least one shunt stub is bent at an angle of ninety degrees to the coplanar waveguide.

7. The apparatus of claim 1, further comprising a first shunt stub located on an opposite side of the coplanar waveguide from a second shunt stub.

8. The apparatus of claim 7, wherein the first shunt stub is symmetrical with the first shunt stub about the coplanar waveguide.

9. The apparatus of claim 1, wherein the at least one capacitor comprises a metal-insulator-metal capacitor.

10. A system for filtering an electrical signal, comprising:

a coplanar waveguide located on a silicon substrate;

a first shunt stub, with a bend of ninety degrees with respect to the longitudinal axis of the coplanar waveguide;

a second shunt stub, located on an opposite side of the coplanar waveguide, and symmetrical to the first shunt stub about the coplanar waveguide;

at least one metal-insulator-metal capacitor bridging a discontinuity of the first shunt stub; and

at least one metal-insulator-metal capacitor bridging a discontinuity of the second shunt stub.

11. The system of claim 10, wherein the coplanar waveguide is comprised of a plurality of chromium-silver-chromium-gold metal layers.

12. The system of claim 10, wherein the silicon substrate comprises a high-resistivity silicon substrate.

13. The system of claim 10, wherein the first and second shunt stubs are comprised of a plurality of chromium-silver-chromium-gold metal layers.

14. A system for filtering an electrical signal, comprising:

a coplanar waveguide located on a silicon substrate;

a first shunt stub at a right angle to the coplanar waveguide;

a second shunt stub, symmetrical with the first shunt stub about the coplanar waveguide;

at least one metal-insulator-metal capacitor bridging a discontinuity of the first shunt stub; and

at least one metal-insulator-metal capacitor bridging a discontinuity of the second shunt stub.

15. The system of claim 14, wherein the coplanar waveguide is comprised of a plurality of chromium-silver-chromium-gold metal layers.

16. The system of claim 14, wherein the silicon substrate comprises a high-resistivity silicon substrate.

17. The system of claim 14, wherein the first and second shunt stubs are comprised of a plurality of chromium-silver-chromium-gold metal layers.