Apparatus for optically characterising thin layered material

• US 6,657,708 B1
• Filed: 09/25/2001
• Issued: 12/02/2003
• Est. Priority Date: 10/14/1998
• Status: Expired due to Term

• Current Assignee: Jobin YVON Incorporated
• Original Assignee: Jobin YVON Incorporated
• Inventors: Ramdane, Benferhat, da Silva, Edouard, Drevillon, Bernard
• Primary Examiner(s): Evans, F. L.
• Assistant Examiner(s): GEISEL, KARA E
• Application Number:
  US09/807,581
• Time in Patent Office: 798 Days
• Field of Search: 356/73, 356/301, 356/369, 356/72
• US Class Current: 356/73
• CPC Class Codes: G01N 2021/656 Raman microprobe
• CPC Class Codes: G01N 21/211 Ellipsometry optical thickness measurement G01B11/06
• CPC Class Codes: G01N 21/65 Raman scattering

Abstract

The invention concerns an apparatus for optically characterising a thin-layer material by backscattering Raman spectometry comprising a frame, a monochromatic excitation laser source (21), optical means (23, 24) directing a light flux emitted by the source towards the material to be characterised, provided with means (22) homogenising the distribution of energy per surface unit, over a minimum surface of some tens of square micrometers, and means for collecting (24) and selecting (27, 28) the light diffused by Raman effect. The apparatus further comprises reflectometric measuring means (3-14) integral with the Raman measuring means, including reflectometric excitation means (3-9) directed on the same sample zone as the Raman excitation means.

Claims

1. An apparatus for characterising a thin-layer material by backscattering Raman spectrometry comprising a frame, a monochromatic excitation laser source (21), optical means (23, 24) directing a light flux that is emitted by the excitation source (21) toward the material to be characterised, and means for collecting (24) and selecting (27, 28) the light diffused by Raman effect, whereas the said apparatus is such that in the optical means directing the excitation laser flux toward the material, there exists between the laser and the material a means (22) homogenising the distribution of energy per surface unit, over a minimum surface of some tens of square micrometers, characterised in that the said apparatus comprises means for reflectometric measurement (3-14), integral with the collecting and selecting means, whereas this reflectometric measuring means comprises reflectometric excitation means (3-9) directed on the same zone of the material as the Raman excitation means.

2. An apparatus for characterising a thin-layer material according to claim 1, characterised in that the reflectometric measuring means are photometric measuring means.

3. An apparatus for characterising a thin-layer material according to claim 1, characterised in that the reflectometric measuring means are ellipsometric measuring means.

4. An apparatus for characterizing a thin-layer material according to any of claims 1 to 3, characterized in that the said means homogenising the distribution of energy comprises a multimode fiber (22).

5. An apparatus for characterizing a thin-layer material according to claim 4, characterizing in that the diameter of the fiber (22) is suited to the surface of the sample that must be lit.

6. An apparatus for characterising a thin-layer material according to claim 4, characterised in that the fiber (22) is interchangeable.

7. An apparatus for characterising a thin-layer material according to claim 4, characterised in that it comprises several fibers enabling to light the sample over a focusable zone over the slot of a spectrometer or to suit the Raman excitation surface to the surface analysed by photometry.

8. An apparatus for characterising a thin-layer material according to any of claims 1 to 3, characterised in that the reflectometric measuring means are modulated reflectometry measuring means.

9. An apparatus for characterising a thin-layer material according to claim 8, characterised in that the modulation is optical.

10. An apparatus for characterising a thin-layer material according to claim 8, characterised in that the modulation is electric.

11. An apparatus for characterising a thin-layer material according to claim 9, characterised in that the modulation is ensured by the Raman excitation source.

12. An apparatus for characterising a thin-layer material according to any of claims 1 to 3, wherein the reflectometric excitation means comprises an optical fiber coupled to a reflectometric source.

13. An apparatus for characterising a thin-layer material according to any of claims 1 to 3, wherein the reflectometric measuring means comprises a reflectometric receiver, and wherein at least one of the collecting and selecting means and reflectometric receivers is connected by an optical fiber.