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Semiconductor-based spiral capacitor

  • US 6,661,079 B1
  • Filed: 02/20/2002
  • Issued: 12/09/2003
  • Est. Priority Date: 02/20/2002
  • Status: Active Grant
First Claim
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1. A capacitor formed on a semiconductor material of a first conductivity type, the capacitor including:

  • a first layer of isolation material formed on the semiconductor material;

    a first metal trace formed on the first layer of isolation material, the first metal trace having a first center point, a first end point, and a spiral shape with loops that extends away from the first center point to the first end point; and

    a second metal trace formed on the first layer of isolation material, the second metal trace having a second center point, a second end point, and a spiral shape with loops that extends away from the second center point to the second end point, the second metal trace being formed between the loops of the first metal trace, and around the first metal trace.

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