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Semiconductor device

  • US 6,661,095 B2
  • Filed: 08/19/2002
  • Issued: 12/09/2003
  • Est. Priority Date: 02/20/2002
  • Status: Expired due to Fees
First Claim
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1. A semiconductor device, comprising:

  • a semiconductor substrate;

    a resistance element formed above or within said semiconductor substrate;

    an interlayer insulation film formed on said resistance element a first contact hole penetrating said interlayer insulation film vertically and connected to said resistance element;

    a second contact hole penetrating said interlayer insulation film vertically and connected to said resistance element;

    a first interconnection layer formed on said interlayer insulation film and connected to said first contact hole; and

    a second interconnection layer formed on said interlayer insulation film and connected to said second contact hole;

    wherein above a region between said first contact hole and said second contact hole, said first interconnection layer and said second interconnection layer are formed not in symmetry to a prescribed plane perpendicular to said semiconductor substrate, but formed as layers of the same thickness at the same height and in point symmetry on a plane parallel to said semiconductor substrate.

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