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Low impedance power distribution structure for a semiconductor chip package

  • US 6,661,100 B1
  • Filed: 07/30/2002
  • Issued: 12/09/2003
  • Est. Priority Date: 07/30/2002
  • Status: Active Grant
First Claim
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1. A wire structure made from an under bump metallurgy (UTBM) process, said wire structure comprising:

  • a substrate having a plurality of first features, wherein, said first features are under bump metallurgy;

    a plurality of second features situated over at least one of said first features, said second features operatively connected to said first features;

    at least one electrical wire interconnecting said plurality of first features, wherein said electrical wire is under bump metallurgy, said electrical wire comprising a metal structure having a low impedance and characterized by having substatiantially the same composition as the first features; and

    wherein said first features and said electrical wire are formed in substantially the same plane.

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