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Methods of fabricating vertical field effect transistors by conformal channel layer deposition on sidewalls

  • US 6,664,143 B2
  • Filed: 11/06/2001
  • Issued: 12/16/2003
  • Est. Priority Date: 11/22/2000
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating a vertical field effect transistor comprising:

  • depositing a vertical channel on a microelectronic substrate at a thickness along the microelectronic substrate that is independent of lithography, the vertical channel extending orthogonal to the microelectronic substrate;

    then forming source and drain regions at respective opposite ends of the vertical channel; and

    then forming an insulated gate adjacent the vertical channel.

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