Method for bottomless deposition of barrier layers in integrated circuit metallization schemes
First Claim
1. A method of selectively depositing a layer using an atomic layer deposition (ALD) process, the method comprising:
- providing a deposition substrate comprising a first surface and a second surface, the first and second surfaces having different material compositions;
conditioning the first surface for subsequent ALD reactions; and
selectively coating over the first surface as compared to the second surface by repeatedly alternating exposure of the deposition substrate to at least two reactant fluids, each alternating exposure having a self-limiting effect.
1 Assignment
0 Petitions
Accused Products
Abstract
Methods are disclosed for selective deposition on desired materials. In particular, barrier materials are selectively formed on insulating surfaces, as compared to conductive surfaces. In the context of contact formation and trench fill, particularly damascene and dual damascene metallization, the method advantageously lines insulating surfaces with a barrier material. The selective formation allows the deposition to be “bottomless,” thus leaving the conductive material at a via bottom exposed for direct metal-to-metal contact when further conductive material is deposited into the opening after barrier formation on the insulating surfaces. Desirably, the selective deposition is accomplished by atomic layer deposition (ALD), resulting in highly conformal coverage of the insulating sidewalls in the opening.
105 Citations
32 Claims
-
1. A method of selectively depositing a layer using an atomic layer deposition (ALD) process, the method comprising:
-
providing a deposition substrate comprising a first surface and a second surface, the first and second surfaces having different material compositions;
conditioning the first surface for subsequent ALD reactions; and
selectively coating over the first surface as compared to the second surface by repeatedly alternating exposure of the deposition substrate to at least two reactant fluids, each alternating exposure having a self-limiting effect. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24)
-
-
25. A method of selectively forming a layer over insulating surfaces of a partially fabricated integrated circuit having exposed insulating surfaces and conductive surfaces, comprising:
-
selectively conditioning the insulating surfaces of the partially fabricated integrated circuit, relative to the conductive surfaces; and
alternatingly introducing vapor-phase reactants to selectively deposit a material over the insulating surfaces, relative to the conductive surfaces, in an atomic layer deposition process. - View Dependent Claims (26, 27, 28, 29, 30, 31, 32)
-
Specification