Ultraviolet light emitting diode
First Claim
Patent Images
1. A light omitting diode comprising:
- a silicon carbide substrate having a first conductivity type;
a first gallium nitride layer above said SiC substrate having the same conductivity type as said substrate;
a superlattice on said GaN layer formed of a plurality of repeating sets of alternating layers selected from the group consisting of GaN, InxGa1-xN, where 0<
x<
1, and AlxInyGa1-x-yN, where 0<
x<
1 and 0<
y<
1 and 0<
x+y<
1;
a second GaN layer on said superlattice baying the same conductivity type as said first GaN layer;
a multiple quantum well on said second GaN layer;
a third GaN layer on said multiple quantum well;
a contact structure on said third GaN layer having the opposite conductivity type from said substrate and said first GaN layer;
an ohmic contact to said SiC substrate; and
an ohmic contact to said contact structure.
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Abstract
A light emitting diode is disclosed. The diode includes a silicon carbide substrate having a first conductivity type, a first gallium nitride layer above the SiC substrate having the same conductivity type as the substrate, a superlattice on the GaN layer formed of a plurality of repeating sets of alternating layers selected from among GaN, InGaN, and AlInGaN, a second GaN layer on the superlattice having the same conductivity type as the first GaN layer, a multiple quantum well on the second GaN layer, a third GaN layer on the multiple quantum well, a contact structure on the third GaN layer having the opposite conductivity type from the substrate and the first GaN layer, an ohmic contact to the SiC substrate, and an ohmic contact to the contact structure.
155 Citations
72 Claims
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1. A light omitting diode comprising:
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a silicon carbide substrate having a first conductivity type;
a first gallium nitride layer above said SiC substrate having the same conductivity type as said substrate;
a superlattice on said GaN layer formed of a plurality of repeating sets of alternating layers selected from the group consisting of GaN, InxGa1-xN, where 0<
x<
1, and AlxInyGa1-x-yN, where 0<
x<
1 and 0<
y<
1 and 0<
x+y<
1;
a second GaN layer on said superlattice baying the same conductivity type as said first GaN layer;
a multiple quantum well on said second GaN layer;
a third GaN layer on said multiple quantum well;
a contact structure on said third GaN layer having the opposite conductivity type from said substrate and said first GaN layer;
an ohmic contact to said SiC substrate; and
an ohmic contact to said contact structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47)
said multiple quantum well emits in the ultraviolet portion of the electromagnetic spectrum and further comprising; a phosphor responsive to the ultraviolet radiation that produces a visible photon in response to the ultraviolet photon emitted by said multiple quantum well.
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45. A pixel comprising:
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a red light emitting diode;
a green light emitting diode; and
a light emitting diode according to claim 1.
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46. A display comprising a plurality of pixels according to claim 45.
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47. An LED lamp comprising a pixel according to claim 45.
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48. An LED comprising:
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a SiC substrate consisting of the 4H polytype of SiC having an n-type conductivity;
an AlxGa1-xN buffer layer, where 0<
x<
1, on said SiC substrate;
a first GaN layer above said SiC substrata having the same conductivity type as said substrate;
a superlattice on said first GaN layer consisting of a plurality of repeating periods of alternating layers of GaN and InxGa1-xN, where 0<
x<
1.a second GaN layer on said superlattice having the same conductivity type as said first GaN layer;
a multiple quantum well on said second GaN layer, a third GaN layer on said multiple quantum well;
a contact structure on said third GaN layer having the opposite conductivity type from said SiC substrate and said first GaN layer;
an ohmic contact to said SiC substrate; and
an ohmic contact to said contact structure. - View Dependent Claims (49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68)
a red light emitting diode;
a green light emitting diode; and
A light emitting diode according to claim 48.
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67. A display comprising a plurality of pixels according to claim 66.
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68. An LED lamp comprising a pixel according to claim 66.
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69. An LED comprising:
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a SiC substrate consisting of the 4H polytype of SiC having an n-type conductivity;
a plurality of GaN dots on the surface of said SiC substrate, said dots being covered with AlxGa1-xN caps, where 0<
x<
1;
an AlxGa1-xN buffer layer, where 0<
x<
1, on said SiC substrate and said dots;
a discontinuous layer of Si3N4 on said buffer layer for reducing the propagation of defects that tend to originate in said SiC substrate;
a first GaN layer on said buffer and said discontinuous layer and having the same conductivity type as said substrate;
a superlattice on said first GaN layer comprising between two and fifty periods of alternating layers of GaN and InxGa1-xN, where 0<
x<
1 and where said InxGa1-xN layers are about 10 Angstroms thick and said GaN layers are about 20 Angstroms thick and wherein both said layers are doped n-type;
a second GaN layer on said superlattice consisting of a doped portion and an undoped portion having the same conductivity type as said first GaN layer and wherein said doped portion is immediately adjacent to said superlattice and said undoped portion is immediately adjacent to said doped portion;
a multiple quantum well on said second GaN layer comprising at least three repetitions of a basic structure formed of a layer of undoped InxGa1-xN, where x is equal to about 0.15, and a layer of GaN, and wherein said InxGa1-xN layers are about 25 Angstroms thick and wherein said GaN layers consist of a first portion of doped GaN and a second portion of undoped GaN with said undoped portion being immediately adjacent to at least one of said undoped InxGa1-xN layers;
a third undoped GaN layer on said multiple quantum well;
a contact structure on said third GaN layer having the opposite conductivity type from said SiC substrate and said first GaN layer and wherein said contact structure comprises an undoped AlxGa1-xN layer, where 0<
x<
1, on said third GaN layer and a p-type AlxGa1-xN layer, where 0≦
x≦
1, on said undoped AlxGa1-xN layer;
a p-type contact layer of GaN on said contact structure an ohmic contact to said SiC substrate; and
an ohmic contact to said contact structure. - View Dependent Claims (70, 71, 72)
a red light emitting diode;
a green light emitting diode; and
a light emitting diode according to claim 69.
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71. A display comprising a plurality of pixels according to claim 70.
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72. An LED lamp comprising a pixel according to claim 70.
Specification
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Current AssigneeCREE Incorporated (Wolfspeed, Inc.)
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Original AssigneeCREE Incorporated (Wolfspeed, Inc.)
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InventorsBergmann, Michael John, Emerson, David Todd, Abare, Amber Christine
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Primary Examiner(s)Prenty, Mark V.
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Application NumberUS10/170,577Publication NumberTime in Patent Office552 DaysField of Search257/13, 257/14, 257/15, 257/22, 257/79, 257/88, 257/89, 257/94, 257/103, 257/77US Class Current257/14CPC Class CodesH01L 33/007 comprising nitride compoundsH01L 33/04 with a quantum effect struc...H01L 33/12 with a stress relaxation st...H01L 33/32 containing nitrogenY10S 438/93 Ternary or quaternary semic...
