Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method

• US 6,667,196 B2
• Filed: 07/25/2001
• Issued: 12/23/2003
• Est. Priority Date: 07/25/2001
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Droopad, Ravindranath, Yu, Zhiyi, Overgaard, Corey
• Primary Examiner(s): Niebling, John F.
• Assistant Examiner(s): LINDSAY JR, WALTER LEE
• Application Number:
  US09/911,507
• Publication Number:
  US 20030020089A1
• Time in Patent Office: 881 Days
• Field of Search: 438/2, 438/142, 438/3, 438/478, 438/488, 438/575
• US Class Current: 438/142
• CPC Class Codes: C30B 23/002 Controlling or regulating
• CPC Class Codes: C30B 23/02 Epitaxial-layer growth
• CPC Class Codes: H01L 21/02197 the material having a perovskite structure, e.g. BaTiO3
• CPC Class Codes: H01L 21/02356 treatment to change the morphology of the insulating layer, e.g. transformation of an amorphous layer into a crystalline layer
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/31691 with perovskite structure
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 21/8258 the substrate being a semiconductor, using a combination of technologies covered by H01L21/8206, H01L21/8213 , H01L21/822, H01L21/8252, H01L21/8254 or H01L21/8256
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32
• CPC Class Codes: H01L 2224/80001 by connecting a bonding area directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
• CPC Class Codes: H01L 2924/00011 Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group

Abstract

High quality epitaxial layers of monocrystalline oxide materials (24) are grown overlying monocrystalline substrates such as large silicon wafers (22) using RHEED information to monitor the growth rate of the growing film. The monocrystalline oxide layer (24) may be used to form a compliant substrate for monocrystalline growth of additional layers. One way to achieve the formation of a compliant substrate includes first growing an accommodating buffer layer (24) on a silicon wafer (22) spaced apart from the silicon wafer (22) by an amorphous interface layer of silicon oxide (28). The amorphous interface layer (28) dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer (24).

Claims

1. A process for fabricating a semiconductor structure comprising:

providing a monocrystalline silicon substrate;

providing a plurality of metal sources in a deposition chamber;

depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate by exposing the substrate to two or more of the plurality of metal sources at one time; and

monitoring a deposition rate of the monocrystalline perovskite oxide film during the depositing step, while the substrate is rotating.

2. The process of claim 1, further comprising the step of determining a composition of the film during the step of depositing.

3. The process of claim 1, wherein the step of monitoring the deposition rate of a monocrystalline perovskite oxide film comprises determining an intensity of a (2×

) RHEED diffraction streak.

4. The process of claim 3, wherein the step of determining comprises evaluating an intensity of a (2×

) streak in a <

110>

azimuth direction.

5. The process of claim 3, wherein the step of determining comprises evaluating as intensity of a (2×

) streak in a <

310>

azimuth direction.

6. The process of claim 3, wherein the step of determining comprises evaluating an intensity of a (2×

) streak in a <

210>

azimuth direction.

7. The process of claim 3, wherein the step of determining comprises evaluating an intensity of a (2×

) streak in a <

010>

azimuth direction.

8. The process of claim 3, further comprising the step of comparing an intensity of the (2×

) streak to a background.

9. The process of claim 1, further comprising the step of forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate.

10. The process of claim 1, further comprising the step of epitaxially forming a monocrystalline compound semiconductor layer overlying the monocrystalline perovskite oxide film.

11. The process of claim 1, further comprising the step of annealing the monocrystalline perovskite oxide film to covert the film to an amorphous layer.

12. The process of claim 1, further comprising the step of forming a template overlying the monocrystalline perovskite oxide film.

13. The process of claim 1, further comprising the steps of:

forming a monocrystalline compound semiconductor layer; and

forming an electronic device using the monocrystalline compound semiconductor layer.

14. The process of claim 13, wherein the step of forming an electronic device includes forming a field effect transistor.

15. The process of claim 13, wherein the step of forming an electronic device includes forming a light emitting device.

16. The process of claim 13, further comprising the step of forming an electronic device using the monocrystalline silicon substrate.

17. The process of claim 16, wherein the step of forming a template comprises depositing aluminum.

18. The process of claim 16, further comprising the step of forming an electrical connection between the electronic device formed using the monocrystalline silicon substrate and the electronic device formed using the monocrystalline compound semiconductor layer.

19. The process of claim 1, further comprising the step of epitaxially forming a monocrystalline GaAs layer.

20. A semiconductor structure formed using the method of claim 1.

21. A semiconductor device formed using the method of claim 1.

22. A process for fabricating a semiconductor structure comprising:

providing a monocrystalline silicon substrate;

providing a plurality of sources in a deposition chamber;

rotating the monocrystalline silicon substrate;

depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate; and

monitoring a deposition rate of the a monocrystalline perovskite oxide film using a RHEED diffraction pattern, while the substrate is rotating.

23. The process of claim 22, wherein the step of depositing comprises exposing the monocrystalline silicon substrate to a plurality of monocrystalline perovskite oxide film metal sources at one time.

24. The process of claim 22, wherein the step of monitoring the crystal structure of a monocrystalline perovskite oxide film comprises determining a brightness of a (2×

) diffraction streak.

25. The process of claim 24, wherein the step of determining comprises evaluating a brightness of a (2×

) streak in a <

110>

azimuth direction.

26. The process of claim 25, wherein the step of determining comprises evaluating a brightness of a (2×

) streak in a <

310>

azimuth direction.

27. The process of claim 25, wherein the step of determining comprises evaluating a brightness of a (2×

) streak in a <

210>

azimuth direction.

28. The process of claim 25, wherein the step of determining comprises evaluating a brightness of a (2×

) streak in a <

010>

azimuth direction.

29. The process of claim 25, further comprising the step of comparing the brightness of the (2×

) streak to a background.

30. The process of claim 22, further comprising the step of forming an amorphous oxide interface layer containing at least silicon and oxygen at an interface between the monocrystalline perovskite oxide film and the monocrystalline silicon substrate.

31. The process of claim 22, further comprising the step of annealing the monocrystalline perovskite oxide film to covert the film to an amorphous layer.

32. The process of claim 22, further comprising the step of forming a template overlying the monocrystalline perovskite oxide film.

33. The process of claim 32, wherein the step of forming a template comprises depositing aluminum.

34. The process of claim 22, further comprising the step of forming an electronic device using the monocrystalline compound semiconductor layer.

35. The process of claim 34, further comprising the step of forming an electronic device using the monocrystalline silicon substrate.

36. The process of claim 35, further comprising the step of forming an electrical connection between the electronic device formed using the monocrystalline silicon substrate and the electronic device formed using the monocrystalline compound semiconductor layer.

37. The process of claim 22, further comprising the step of epitaxially forming a monocrystalline compound semiconductor layer comprises forming a GaAs layer.

38. A semiconductor structure formed using the process of claim 22.

40. The process of claim 22, further comprising the step of determining a composition of the film during the step of depositing.

39. A process for fabricating a semiconductor structure comprising:

providing a monocrystalline silicon substrate;

providing a plurality of sources in a deposition chamber;

rotating the monocrystalline silicon substrate;

depositing a monocrystalline perovskite oxide film overlying the monocrystalline silicon substrate, while rotating the monocrystalline silicon substrate;

monitoring the deposition of the a monocrystalline perovskite oxide film using a RHEED diffraction pattern, while the monocrystalline silicon substrate is rotating;

forming an amorphous oxide layer interposed between the monocrystalline silicon substrate and the monocrystalline perovskite oxide film; and

epitaxially growing a layer of GaAs overlying the monocrystalline perovskite oxide.

41. The process of claim 39, further comprising the step of determining a composition of the film during the step of depositing.