Method for etching sidewall polymer and other residues from the surface of semiconductor devices

• US 6,667,244 B1
• Filed: 03/24/2000
• Issued: 12/23/2003
• Est. Priority Date: 03/24/2000
• Status: Expired due to Fees

• Current Assignee: Excelsus Technologies, Inc (Yageo Corporation)
• Original Assignee: Excelsus Technologies, Inc (Yageo Corporation)
• Inventors: Cox, Gerald M., Donoghue, John Kevin, Lee, Chan-Yun, Van Baekel, Kristel
• Primary Examiner(s): Norton, Nadine G.
• Assistant Examiner(s): ANDERSON, MATTHEW A
• Application Number:
  US09/534,657
• Time in Patent Office: 1,369 Days
• Field of Search: 438/706, 438/714, 438/725, 438/712
• US Class Current: 438/712
• CPC Class Codes: C01B 5/00 Water
• CPC Class Codes: G03F 7/40 Treatment after imagewise removal, e.g. baking
• CPC Class Codes: G03F 7/427 using plasma means only
• CPC Class Codes: H01L 21/02063 the processing being the formation of vias or contact holes
• CPC Class Codes: H01L 21/31138 by dry-etching

Abstract

A method for removing organic and inorganic residues or polymers from the surface of semiconductor devices, with a combination of etchant gasses including water vapor generated using a catalytic moisture generator or CMG. The water vapor is generated by introducing O₂ and an H₂ containing forming gas including hydrogen and at least one dilutant gas into the CMG. The water vapor from the CMG is introduced into a reaction chamber with other etchant gasses to treat the surface of a semiconductor device placed within. The flow rate of water vapor out of the CMG and into the reaction chamber may be controlled by controlling the flow rate of the H₂ containing forming gas and the flow rate of the O₂ gas into the CMG.

Claims

1. A method for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:

providing a reaction chamber containing a semiconductor device with a residue formed thereon,

introducing O₂ and a forming gas having an H₂ component into a catalytic moisture generator to create water vapor,

transporting the water vapor to the reaction chamber,

transporting etchant gases to the reaction chamber,

exposing the water vapor and etchant gases to a microwave energy source as the water vapor and etchant gases are being transported to the reaction chamber,

introducing the water vapor and etchant gases into the reaction chamber, applying R_F energy to the etchant gases and water vapor to generate a plasma, and

in the absence of fluorine, exposing the semiconductor device positioned within the reaction chamber to the plasma for a period of time sufficient for removal of the organic and inorganic residues from the surface of the semiconductor device.

2. A method for removing organic and inorganic residues from the surface of a semiconductor device, the method comprising:

providing a reaction chamber containing a semiconductor device with a residue formed thereon,

introducing O₂ and a forming gas having an H₂ component into a catalytic moisture generator to create water vapor,

transporting the water vapor to a reaction chamber,

controlling a rate of flow of the water vapor by adjusting the rate of flow of the O₂ and forming gas having an H₂ component into a catalytic moisture generator

exposing the water vapor to a microwave energy source as the water vapor is transported to the reaction chamber,

transporting etchant gases to the reaction chamber,

exposing the etchant gases to a microwave energy source as etchant gases are transported to the reaction chamber,

introducing the etchant gases into the reaction chamber,

separately introducing the water vapor into the reaction chamber,

applying R_F energy to the etchant gases and water vapor to generate a plasma, and

in the absence of fluorine, exposing a semiconductor device positioned within the reaction chamber to the plasma for a period of time sufficient for removal of the organic and inorganic residues from the surface of the semiconductor device.