Methods and compositions for etch cleaning microelectronic substrates in carbon dioxide

• US 6,669,785 B2
• Filed: 05/15/2002
• Issued: 12/30/2003
• Est. Priority Date: 05/15/2002
• Status: Expired due to Fees

• Current Assignee: Micell Technologies Inc.
• Original Assignee: Micell Technologies Inc.
• Inventors: Wagner, Mark I., Gross, Stephen M., McClain, James B., DeYoung, James P.
• Primary Examiner(s): CARRILLO, BIBI SHARIDAN
• Application Number:
  US10/146,617
• Publication Number:
  US 20030216269A1
• Time in Patent Office: 594 Days
• Field of Search: 134/2, 134/3, 134/25.4, 134/26, 134/28, 134/29, 134/34, 134/36, 134/41, 134/42
• US Class Current: 134/3
• CPC Class Codes: B08B 7/0021 by liquid gases or supercritical fluids
• CPC Class Codes: C11D 2111/22 Electronic devices, e.g. PCBs or semiconductors
• CPC Class Codes: C11D 7/02 Inorganic compounds
• CPC Class Codes: C11D 7/08 Acids
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31133 by chemical means

Abstract

A method of cleaning a microelectronic substrate is carried out by providing a cleaning fluid, the cleaning fluid comprising an adduct of hydrogen fluoride with a Lewis base in a carbon dioxide solvent; and then cleaning the substrate by contacting the substrate to the cleaning fluid for a time sufficient to clean the substrate.

Claims

1. A method of cleaning a microelectronic substrate, comprising:

(a) providing a first cleaning fluid, said first cleaning fluid consisting of a single phase solution of an amine and a polar organic cosolvent in carbon dioxide;

(b) providing a second cleaning fluid, said second cleaning fluid consisting of an adduct of hydrogen fluoride with a Lewis base in carbon dioxide;

(c) cleaning said substrate by contacting said substrate to said second cleaning fluid for a time sufficient to clean said substrate; and

(d) cleaning said substrate before, after, or both before and after said cleaning step (c) by contacting said substrate to said first cleaning fluid for a time sufficient to clean said substrate.

2. The method according to claim 1, wherein said amine is morpholine, aniline or dibutylamine.

3. The method according to claim 1, wherein said polar organic cosolvent is a C1-C4 alcohol.

4. The method according to claim 1, wherein said Lewis base is pyridine or poly(vinylpyridine) or triethylamine.

5. The method according to claim 1, wherein said second cleaning fluid comprises:

from 0.001 to 20 percent by weight of said adduct of hydrogen fluoride with a Lewis base; and

from 50 to 99.999 percent by weight of carbon dioxide.

6. The method according to claim 1, wherein said first cleaning fluid is nonaqueous.

7. The method according to claim 1, wherein said carbon dioxide is liquid carbon dioxide.

8. The method according to claim 1, wherein said carbon dioxide is supercritical carbon dioxide.