Optical proximity correction method utilizing serifs having variable dimensions

• US 6,670,081 B2
• Filed: 06/11/2001
• Issued: 12/30/2003
• Est. Priority Date: 06/13/2000
• Status: Expired due to Term

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Masktools Netherlands B.V. (ASML Holding NV)
• Inventors: Laidig, Thomas, Wampler, Kurt E.
• Primary Examiner(s): ROSASCO, STEPHEN D
• Application Number:
  US09/877,231
• Publication Number:
  US 20020028393A1
• Time in Patent Office: 932 Days
• Field of Search: 430/5, 430/322, 430/311, 430/296, 716/19, 716/21
• US Class Current: 430/5
• CPC Class Codes: G03F 1/36 Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
• CPC Class Codes: G03F 7/70441 Optical proximity correction [OPC]

Abstract

A method of forming a mask for optically transferring a lithographic pattern onto a substrate by use of an optical exposure tool, where the pattern comprises a plurality of features each of which has corresponding edges and vertices. The method includes the steps of forming a serif on a plurality of the vertices contained in the lithographic pattern, where each of the serifs has a rectangular shape, and determining the size of each serif independently on the basis of the length of the feature edges touching a given vertex, and the horizontal and vertical distance of the given vertex to the nearest feature edge, wherein the position of each side of a given serif is independently adjustable relative to the length of the remaining sides of the given serif.

Claims

1. A method of forming a mask for transferring a lithographic pattern onto a substrate by use of a lithographic exposure apparatus, said pattern comprising a plurality of features each of which has corresponding edges and vertices, said method comprising the steps of:

forming a serif on a plurality of said vertices contained in said lithographic pattern, each of said serifs having a substantially rectangular shape, and

determining the size of each serif independently on the basis of the length of the feature edges forming a given vertex, and a first distance and a second distance from the given vertex to the nearest feature edge, said first distance and said second distance corresponding to a first direction and a second direction, respectively, which are substantially perpendicular to one another and within the plane of the mask pattern,

wherein the position of each side of a given serif is independently adjustable relative to the positions of the remaining sides of the given serif.

2. The method of claim 1, further comprising assigning an adjustment vector to each side of said given serif, said adjustment vector defining a variation in the location of a corresponding side of said given serif relative to a default location.

3. The method of claim 1, wherein each side of said serif has a default position which is selected such that each serif initially exhibits a substantially square configuration.

4. The method of claim 1, further comprising the step of defining predetermined rules governing the length of each side of a serif, said predetermined rules utilizing the results of the determination of the length of the feature edges forming a given vertex on which said serif is to be positioned, and the first and second distance of the given vertex to the nearest feature edge.

5. The method of claim 1, wherein said first and said second directions correspond to X and Y axes parallel to which the edges of at least 50% of the mask features extend.

6. The method of claim 1, wherein said vertices comprise convex vertices and concave vertices, and said serifs comprise positive serifs and negative serifs, respectively.

7. The method of claim 1, wherein said pattern comprises a plurality of line end features, each of which has two vertices and a feature edge, said method comprising the steps of:

forming a serif on each of said vertices contained in a given line end feature,

determining the length of the feature edge, and

adjusting the size of each serif formed on said vertices of said given line end feature such that the serifs contact each other so as to form one contiguous edge when said length of said feature edge is less than a predetermined length.

8. The method of claim 7, wherein the size of each of said serifs is adjusted such that each of said serifs overlaps ½

the length of said feature edge.

9. The method of claim 7, wherein the maximum amount the size of each of said serifs can be adjusted by is equal to ½

the length of said feature edge.

10. The method of claim 1, said method comprising the steps of:

forming a serif on at least one of said vertices, said serif having a rectangular shape, and

determining the size of said serif on the basis of at least the length of the feature edges forming said one of said vertices,

said length of each of said feature edges being determined by measuring the distance from said one of said vertices to the closest feature edge which exceeds either a predefined jog tolerance or a predefined slope tolerance.

11. The method of claim 1, wherein the adjustments to the length of the sides of a given serif are added together to achieve a total adjustment.

12. A device manufacturing method comprising the steps of:

(a) providing a substrate that is at least partially covered by a layer of radiation-sensitive material;

(b) providing a projection beam of radiation using a radiation system;

(c) using a mask pattern to endow the projection beam with a pattern in its cross-section;

(d) projecting the patterned beam of radiation onto a target portion of the layer of radiation-sensitive material,

wherein the mask employed in step (c) is designed using a method according to claim 1.

13. A device manufactured according to the method of claim 12.