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Fabrication of low leakage-current backside illuminated photodiodes

  • US 6,670,258 B2
  • Filed: 04/20/2001
  • Issued: 12/30/2003
  • Est. Priority Date: 04/20/2000
  • Status: Expired due to Term
First Claim
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1. A method of fabricating a low-leakage current photodiode array comprising:

  • defining frontside structures for a photodiode on a front side of a substrate;

    forming a heavily-doped gettering layer on a back surface of the substrate;

    carrying out a gettering process on the substrate to transport undesired components from the substrate to said gettering layer, and to form another layer in addition to said gettering layer, which is a heavily-doped, conductive, crystalline layer within the substrate;

    after said gettering process, removing the entire gettering layer; and

    after said removing, thinning the heavily-doped, conductive, crystalline layer within the substrate to create a native optically transparent, conductive bias electrode layer.

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