Method of plasma etching of silicon carbide

• US 6,670,278 B2
• Filed: 03/30/2001
• Issued: 12/30/2003
• Est. Priority Date: 03/30/2001
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Lam Research Corporation
• Inventors: Goss, Michael, Zhu, Helen H., Li, Si Yi, Bowers, James, Sadjadi, S. M. Reza, Pirkle, David R.
• Primary Examiner(s): CHEN, KIN CHAN
• Application Number:
  US09/820,726
• Publication Number:
  US 20020177322A1
• Time in Patent Office: 1,005 Days
• Field of Search: 438/700, 438/706, 438/710, 438/711, 438/714, 438/719, 438/723, 438/724
• US Class Current: 438/710
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76807 for dual damascene structures
• CPC Class Codes: H01L 21/7681 involving one or more buried masks

Abstract

The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH₃F, an oxygen-containing gas such as O₂ and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Claims

1. A method of plasma etching a layer of silicon carbide with selectivity to underlying and overlying low-k layers of dielectric material, the method comprising:

positioning a semiconductor substrate in a reactor chamber, the substrate including a layer of silicon carbide and underlying and overlying layers of low-k dielectric material;

supplying an etchant gas to the chamber, the etchant gas comprising at least one hydrogen-containing fluorocarbon gas, an oxygen containing gas, and optional carrier gas; and

energizing the etchant gas into a plasma state and forming etched openings in the silicon carbide layer, the etched openings being defined by openings in the overlying layer of low-k dielectric material and the etched openings being over the underlying layer of low-k dielectric material, the silicon carbide layer being etched at a faster rate than the underlying and overlying layers of low-k dielectric material.

2. The method of claim 1, wherein the hydrogen-containing fluorocarbon gas is at least one of CH₃F, CH₂F₂, CHF₃ and C₂H₄F₆.

3. The method of claim 1, wherein the hydrogen-containing fluorocarbon gas is C_xH_yF_z where x is ≧

1, y is ≧

2 and z is ≧

1 and the oxygen-containing gas is O₂.

4. The method of claim 3, wherein C_xH_yF_z is CH₃ and the gas composition is supplied to the chamber at a flow rate ratio of CH₃F:

O₂ of about 1;

2 to about 2;

1.

5. The method of claim 3, wherein the CH₃F is supplied to the chamber at a flow rate of about 15 to 35 sccm and the O₂ is supplied to the chamber at a flow rate of about 10 to 30 sccm.

6. The method of claim 1, wherein the carrier gas is argon and the argon is supplied to the reactor chamber at a rate of 50 to 400 sccm.

7. The method of claim 1, wherein the etchant gas further comprises NF₃, the NF₃ being supplied to the chamber at a flow rate which is less than a flow rate of the C_xH_yF_z.

8. The method of claim 1, wherein the oxygen containing gas is O₂, CO, or CO₂.

9. The method of claim 1, wherein the carrier gas is He, Ne, Ar, Kr, or Xe, the etchant gas consisting essentially of the hydrogen-containing fluorocarbon gas, the oxygen-containing gas and the carrier gas.

10. The method of claim 1, wherein the silicon carbide is etched with an etch rate selectivity to an overlying silicon oxide mask layer of at least 10.

11. The method of claim 1, wherein the silicon carbide is etched with an etch rate selectivity to the overlying and underlying low-k dielectric layers of at least 5.

12. The method of claim 1, wherein the silicon carbide etch rate is at least 1200 Å

/mm.

15. The method of claim 1, wherein the reactor chamber comprises an ECR plasma reactor, an inductively coupled plasma reactor, a capacitively coupled reactor, a helicon plasma reactor or a magnetron plasma reactor.

16. The method of claim 1, wherein the openings comprise vias, contacts, and/or trenches.

17. The method of claim 1, wherein the openings are in a single or dual damascene structure.

18. The method of claim 1, wherein the chamber pressure in the reactor chamber is 50 to 250 mTorr.

19. The method of claim 1, wherein the silicon carbide is hydrogenated silicon carbide.

20. The method of claim 1, wherein the silicon carbide layer comprises an upper portion of a silicon carbide substrate.

21. The method of claim 1, wherein the substrate includes a patterned silicon dioxide hard mask above the layer of low-k dielectric material, the layer of low-k dielectric material having been previously etched to expose the silicon carbide layer at locations corresponding to openings in the hard mask.

13. A method of plasma etching a layer of silicon carbide with selectivity to an overlying layer of low-k dielectric material, the method comprising:

positioning a semiconductor substrate in a reactor chamber, the substrate including a layer of silicon carbide and an overlying layer of low-k dielectric material;

supplying an etchant gas to the chamber, the etchant gas comprising at least one hydrogen-containing fluorocarbon gas, an oxygen containing gas, and optional carrier gas; and

energizing the etchant gas into a plasma state and forming etched openings in the silicon carbide layer, the etched openings being defined by openings in the overlying layer of low-k dielectric material, the silicon carbide layer being etched at a faster rate than the overlying layer of low-k dielectric material,

wherein the substrate includes a patterned silicon dioxide hard mask above the layer of low-k dielectric material, the layer of low-k dielectric material having been previously etched to expose the silicon carbide layer at locations corresponding to openings in the hard mask, the silicon carbide being etched with an etch rate selectivity to the hard mask of at least 5.

14. The method of claim 13, wherein the low-k dielectric material is a low-k dielectric organic polymer material.

22. A method of plasma etching a layer of silicon carbide with selectivity to underlying and overlying low-k layers of dielectric material, the method comprising:

positioning a semiconductor substrate in a reactor chamber, the substrate including a layer of silicon carbide, and underlying and overlying layers of low-k dielectric material, the low-k dielectric material having a dielectric constant of less than 3.0;

supplying an etchant gas to the chamber, the etchant gas comprising at least one hydrogen-containing fluorocarbon gas, an oxygen containing gas, and optional carrier gas; and

energizing the etchant gas into a plasma state and forming etched openings in the silicon carbide layer, the etched openings being defined by openings in the overlying layer of low-k dielectric material and the etched openings being over the underlying layer of low-k dielectric material, the silicon carbide layer being etched at a faster rate than the underlying and overlying layers of low-k dielectric material.