Shallow photonic bandgap device

• US 6,671,443 B2
• Filed: 02/19/2002
• Issued: 12/30/2003
• Est. Priority Date: 05/17/2001
• Status: Expired due to Term

• Current Assignee: Cisco Technology, Inc. (Cisco Systems, Inc.)
• Original Assignee: Sioptical Inc. (Cisco Systems, Inc.)
• Inventors: Deliwala, Shrenik
• Primary Examiner(s): ULLAH, AKM E
• Application Number:
  US10/078,972
• Publication Number:
  US 20030118306A1
• Time in Patent Office: 679 Days
• Field of Search: 385/125, 385/4, 385/147, 385/8, 385/129, 385/142, 385/123, 385/10, 385/12, 385/14, 438/692
• US Class Current: 385/125
• CPC Class Codes: B82Y 20/00 Nanooptics, e.g. quantum optics or photonic crystals
• CPC Class Codes: G02B 2006/12038 Glass (SiO2 based materials)
• CPC Class Codes: G02B 2006/12061 Silicon
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/12104 Mirror; Reflectors or the like
• CPC Class Codes: G02B 2006/12107 Grating
• CPC Class Codes: G02B 2006/12114 Prism
• CPC Class Codes: G02B 2006/12135 Temperature control
• CPC Class Codes: G02B 2006/12161 Distributed feedback [DFB]
• CPC Class Codes: G02B 2006/12164 Multiplexing; Demultiplexing
• CPC Class Codes: G02B 2006/12176 Etching
• CPC Class Codes: G02B 27/285 comprising arrays of elements, e.g. microprisms
• CPC Class Codes: G02B 5/045 Prism arrays
• CPC Class Codes: G02B 6/10 of the optical waveguide type G02B6/02, G02B6/24 take precedence; devices or arrangements for the control of light by electric, magnetic, electro-magnetic or acoustic means G02F1/00; transferring the modulation of modulated light G02F2/00; optical logic elements G02F3/00; optical analogue/digital converters G02F7/00
• CPC Class Codes: G02B 6/12004 Combinations of two or more optical elements
• CPC Class Codes: G02B 6/12007 forming wavelength selective elements, e.g. multiplexer, demultiplexer
• CPC Class Codes: G02B 6/12011 characterised by the arrayed waveguides, e.g. comprising a filled groove in the array section
• CPC Class Codes: G02B 6/12026 characterised by means for reducing the temperature dependence
• CPC Class Codes: G02B 6/12033 characterised by means for configuring the device, e.g. moveable element for wavelength tuning switching G02B6/35; thermo-optic devices G02F1/0147
• CPC Class Codes: G02B 6/1225 comprising photonic band-gap structures or photonic lattices
• CPC Class Codes: G02B 6/1228 : Tapered waveguides, e.g. integrated spot-size transformers for coupling with fibres G02B6/305
• CPC Class Codes: G02B 6/124 : Geodesic lenses or integrated gratings
• CPC Class Codes: G02B 6/2861 : using fibre optic delay lines and optical elements associated with them, e.g. for use in signal processing, e.g. filtering delay lines in general H03H, H01P9/00; optical computing devices G06E
• CPC Class Codes: G02B 6/29349 : Michelson or Michelson/Gires-Tournois configuration, i.e. based on splitting and interferometrically combining relatively delayed signals at a single beamsplitter
• CPC Class Codes: G02B 6/29358 : Multiple beam interferometer external to a light guide, e.g. Fabry-Pérot, etalon, VIPA plate, OTDL plate, continuous interferometer, parallel plate resonator G02B6/29347, G02B6/29349, G02B6/2935, G02B6/29361 take precedence; resonator evanescently coupled to light guide G02B6/29335
• CPC Class Codes: G02B 6/34 : utilising prism or grating G02B6/293 takes precedence
• CPC Class Codes: G02B 6/4215 : the intermediate optical elements being wavelength selective optical elements, e.g. variable wavelength optical modules or wavelength lockers G02B6/4246 takes precedence
• CPC Class Codes: G02B 6/4232 : using the surface tension of fluid solder to align the elements, e.g. solder bump techniques flip-chip mounting techniques in assembly of semiconductor devices H01L24/81
• CPC Class Codes: G02B 6/43 : Arrangements comprising a plurality of opto-electronic elements and associated optical interconnections
• CPC Class Codes: G02F 1/0147 : based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/0152 : using free carrier effects, e.g. plasma effect
• CPC Class Codes: G02F 1/025 : in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 1/295 : Analog deflection from or in an optical waveguide structure]
• CPC Class Codes: G02F 2201/20 : delay line
• CPC Class Codes: H01L 27/1203 : the substrate comprising an insulating body on a semiconductor body, e.g. SOI three-dimensional layout H01L27/0688

Abstract

A method for forming a hybrid active electronic and optical circuit using a lithography mask. The hybrid active electronic and optical circuit comprising an active electronic device and at least one optical device on a Silicon-On-Insulator (SOI) wafer. The SOI wafer including an insulator layer and an upper silicon layer. The upper silicon layer including at least one component of the active electronic device and at least one component of the optical device. The method comprising projecting the lithography mask onto the SOI waver in order to simultaneously pattern the component of the active electronic device and the component of the optical device on the SOI wafer.

Claims

1. A photonic band gap device, comprising:

a Silicon-On-Insulator (SOI) wafer including an upper silicon layer and an insulator layer;

a waveguide at least partially formed in the SOI wafer, the waveguide having a first surface and a second surface, the second surface being substantially parallel to, and spaced from, the first surface; and

at least one photonic crystal region located within the waveguide, the photonic crystal region comprising;

a plurality of repetitive members located proximate the first surface, each one of the plurality repetitive shallow members having a first cross-sectional shape, wherein at least one of the plurality of repetitive shallow members extends for a distance toward the second surface but does not reach the second surface, further wherein a first dielectric region having a first dielectric constant range is projected from the first surface to the second surface in a second cross-sectional shape generally corresponding to the first cross-sectional shape, the region within the waveguide that surrounds the first dielectric region having a second dielectric range.

2. The photonic band gap device of claim 1, wherein each one of the plurality of repetitive shallow members is at least partially filled with air.

3. The photonic band gap device of claim 1, wherein each one of the plurality of repetitive shallow members is at least partially filled with metal.

4. The photonic band gap device of claim 1, wherein each one of the plurality of repetitive shallow members is at least partially filled with glass.

5. The photonic band gap device of claim 1, that is configured as a hybrid active electronic and optical circuit, wherein the hybrid active electronic and optical circuit is at least partially formed in the SOI wafer, the hybrid active electronic and optical circuit including an active electronic device and at least one optical device.

6. The photonic band gap device of claim 5, further comprising:

an input/output light coupler associated with the at least one optical device; and

an evanescent coupling region formed at least in part from a gap portion that couples the input/output light coupler to the at least one optical device using evanescent coupling.

7. The photonic band gap device of claim 1, including a focusing mirror.

8. The photonic band gap device of claim 1, including an input/output coupler that couples light into or out of the waveguide.

9. The photonic band gap device of claim 5, wherein the hybrid active electronic and optical circuit includes one from the group of a Fabry-Perot cavity, a wavelength division multiplexer modulator, and an evanescent coupler.

10. The photonic band gap device of claim 5, wherein the hybrid active electronic and optical circuit includes a diode.

11. The photonic band gap device of claim 5, wherein the hybrid active electronic and optical circuit includes a transistor.

12. The photonic band gap device of claim 5, wherein the hybrid active electronic and optical circuit includes one from the group of a p-n device, a field plated device, a Schottky device, a MOSCAP, and a MOSFET.

13. A photonic band gap device, comprising:

a Silicon-On-Insulator (SOI) wafer including an upper silicon layer and an insulator layer, wherein the upper silicon layer is 10 microns or less thick;

a waveguide at least partially formed in the SOI wafer, the waveguide having a first surface and a second surface, the second surface being parallel to the first surface; and

at least one photonic crystal region located within the waveguide, the photonic crystal region comprising;

a plurality of repetitive members located proximate the first surface, each one of the plurality repetitive shallow members having a first cross-sectional shape, wherein at least one of the plurality of repetitive shallow members extends from the first surface to the second surface.

14. The photonic band gap device of claim 13, wherein each one of the plurality of repetitive shallow members is at least partially filled with air.

15. The photonic band gap device of claim 13, wherein each one of the plurality of repetitive shallow members is at least partially filled with metal.

16. The photonic band gap device of claim 13, wherein each one of the plurality of repetitive shallow members is at least partially filled with glass.

17. The photonic band gap device of claim 13, that is configured as a hybrid active electronic and optical circuit, wherein the hybrid active electronic and optical circuit is at least partially formed in the SOI wafer, the hybrid active electronic and optical circuit including an active electronic device and at least one optical device.

18. The photonic band gap device of claim 17, further comprising:

an input/output light coupler associated with the at least one optical device; and

an evanescent coupling region formed at least in part from a gap portion that couples the input/output light coupler to the at least one optical device using evanescent coupling.

19. The photonic band gap device of claim 13, including a focusing mirror.

20. The photonic band gap device of claim 13, including an input/output coupler that couples light into or out of the waveguide.

21. The photonic band gap device of claim 17, wherein the hybrid active electronic and optical circuit includes one from the group of a Fabry-Perot cavity, a wavelength division multiplexer modulator, and an evanescent coupler.

22. The photonic band gap device of claim 17, wherein the hybrid active electronic and optical circuit includes a diode.

23. The photonic band gap device of claim 17, wherein the hybrid active electronic and optical circuit includes a transistor.

24. The photonic band gap device of claim 17, wherein the hybrid active electronic and optical circuit includes one from the group of a p-n device, a field plated device, a Schottky device, a MOSCAP, and a MOSFET.

25. A photonic band gap device, comprising:

a wafer including an upper silicon layer and an insulator layer;

a waveguide at least partially formed in the wafer, the waveguide having a first surface and a second surface, the second surface being substantially parallel to, and spaced from, the first surface; and

at least one photonic crystal region located within the waveguide, the photonic crystal region comprising;

a plurality of repetitive members located proximate the first surface, each one of the plurality repetitive shallow members having a first cross-sectional shape, wherein at least one of the plurality of repetitive shallow members extends for a distance toward the second surface but does not reach the second surface, further wherein a first dielectric region having a first dielectric constant range is projected from the first surface to the second surface in a second cross-sectional shape generally corresponding to the first cross-sectional shape, the region within the waveguide that surrounds the first dielectric region having a second dielectric range.

26. The photonic band gap device of claim 25, wherein the wafer includes a Silicon-On-Insulator (SOI) wafer.

27. The photonic band gap device of claim 25, wherein the wafer includes a Silicon-On-Sapphire wafer.