Plasma processing apparatus

• US 6,673,196 B1
• Filed: 08/31/2000
• Issued: 01/06/2004
• Est. Priority Date: 09/02/1999
• Status: Expired due to Fees

• Current Assignee: National Security Agency, Tokyo Electron Limited
• Original Assignee: Tokyo Electron Limited
• Inventors: Oyabu, Jun
• Primary Examiner(s): ALEJANDRO MULERO, LUZ L
• Application Number:
  US09/653,457
• Time in Patent Office: 1,223 Days
• Field of Search: 118/715, 118/719, 118/723.R, 118/723.E, 118/723.ER, 156/345, 156/345.47, 156/345.31, 156/345.32, 156/345.33
• US Class Current: 156/345.31
• CPC Class Codes: H01J 37/32477 characterised by the means for protecting vessels or internal parts, e.g. coatings
• CPC Class Codes: H01J 37/32743 for introducing the material into processing chamber

Abstract

The present invention provides a plasma processing apparatus, comprising a chamber for applying a film depositing treatment or an etching treatment to a target object by utilizing plasma, and a gate liner covering the surface of the open portion of a chamber gate for transferring the target object into and out of the chamber so as to prevent the chamber gate from being affected by the plasma. A gate aspect ratio, which is a ratio of the depth of the open portion of the chamber gate to the length in the short-side direction, is determined in accordance with the anode/cathode ratio, which is a ratio in area of the anode region to the cathode region within the chamber, so as to prevent an abnormal discharge within the gate space.

Claims

1. A plasma processing apparatus, comprising:

a chamber whose inner space can be held in a vacuum state and in which a plasma processing is applied to a target object;

an exhaust mechanism for exhausting the inner space of the chamber to establish a vacuum state;

a gas introducing mechanism for introducing a process gas into the chamber;

a lower electrode supporting the target object;

an upper electrode arranged to face the lower electrode;

a power source arranged outside the chamber for supplying an electric power to the electrodes so as to form a plasma of the process gas within the chamber;

a gate open portion formed in the chamber for transferring the target object into and out of the chamber; and

a gate valve for opening/closing the gate open portion,

wherein a gate aspect ratio, which is a ratio of a depth of the gate open portion to a width of the gate open portion, is at most 1.5, and an anode/cathode ratio, which is a ratio of an area of an anode portion to an area of a cathode portion in the chamber falls within a range of 18 to 25.

2. The plasma processing apparatus according to claim 1, further comprising a gate liner detachably mounted to cover a surface of the gate open portion and serving to prevent the gate open portion from being affected by the plasma during the plasma processing.

3. The plasma processing apparatus according to claim 2, wherein said gate liner is made of a metal.

4. The plasma processing apparatus according to claim 2, wherein said gate liner is made of an aluminum plate having the surface formed of an anodized aluminum.

5. The plasma processing apparatus according to claim 2, wherein said gate liner is made of a ceramic material.