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Semiconductor processing equipment having improved process drift control

  • US 6,673,198 B1
  • Filed: 12/22/1999
  • Issued: 01/06/2004
  • Est. Priority Date: 12/22/1999
  • Status: Expired due to Term
First Claim
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1. A plasma processing system useful for processing a semiconductor substrate comprising:

  • a plasma processing chamber having an interior space bounded by a chamber sidewall;

    a substrate support on which a substrate is processed within the interior space, the chamber sidewall being spaced outwardly of a periphery of the substrate support;

    a gas supply through which process gas can be supplied to the interior space during processing of the substrate;

    an energy source which can energize the process gas in the interior space into a plasma state during processing of the substrate; and

    a slip cast part having a surface thereof exposed to the interior space, the slip cast part including a surface having pores impregnated with free silicon and a protective layer on the surface which protects the silicon from being attacked by the plasma in the interior space.

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