Semiconductor processing equipment having improved process drift control
First Claim
1. A plasma processing system useful for processing a semiconductor substrate comprising:
- a plasma processing chamber having an interior space bounded by a chamber sidewall;
a substrate support on which a substrate is processed within the interior space, the chamber sidewall being spaced outwardly of a periphery of the substrate support;
a gas supply through which process gas can be supplied to the interior space during processing of the substrate;
an energy source which can energize the process gas in the interior space into a plasma state during processing of the substrate; and
a slip cast part having a surface thereof exposed to the interior space, the slip cast part including a surface having pores impregnated with free silicon and a protective layer on the surface which protects the silicon from being attacked by the plasma in the interior space.
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Accused Products
Abstract
A plasma processing chamber including a slip cast part having a surface thereof exposed to the interior space of the chamber. The slip cast part includes free silicon contained therein and a protective layer on the surface which protects the silicon from being attacked by plasma in the interior space of the chamber. The slip cast part can be made of slip cast silicon carbide coated with CVD silicon carbide. The slip cast part can comprise one or more parts of the chamber such as a wafer passage insert, a monolithic or tiled liner, a plasma screen, a showerhead, dielectric member, or the like. The slip cast part reduces particle contamination and reduces process drift in plasma processes such as plasma etching of dielectric materials such as silicon oxide.
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Citations
9 Claims
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1. A plasma processing system useful for processing a semiconductor substrate comprising:
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a plasma processing chamber having an interior space bounded by a chamber sidewall;
a substrate support on which a substrate is processed within the interior space, the chamber sidewall being spaced outwardly of a periphery of the substrate support;
a gas supply through which process gas can be supplied to the interior space during processing of the substrate;
an energy source which can energize the process gas in the interior space into a plasma state during processing of the substrate; and
a slip cast part having a surface thereof exposed to the interior space, the slip cast part including a surface having pores impregnated with free silicon and a protective layer on the surface which protects the silicon from being attacked by the plasma in the interior space. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A plasma processing system useful for processing a semiconductor substrate comprising:
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a plasma processing chamber having an interior space bounded by a chamber sidewall;
a substrate support on which a substrate is processed within the interior space, the chamber sidewall being spaced outwardly from a periphery of the substrate support;
a gas supply through which process gas is supplied to the interior space during processing of the substrate;
an energy source which energizes the process gas in the interior space into a plasma state during processing of the substrate; and
a slip cast part attached to the chamber sidewall by an elastomer joint, the slip cast part having a surface exposed to the interior space, the slip cast part including a surface having pores impregnated with free silicon and a protective layer on the surface which protects the silicon from being attacked by the plasma in the interior space.
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Specification