Method and system for evaluating polysilicon, and method and system for fabricating thin film transistor

• US 6,673,639 B2
• Filed: 02/12/2002
• Issued: 01/06/2004
• Est. Priority Date: 02/15/2001
• Status: Expired due to Term

• Current Assignee: Japan Display West Incorporated (Japan Display Incorporated)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Wada, Hiroyuki, Umezu, Nobuhiko, Tatsuki, Koichi
• Primary Examiner(s): WILCZEWSKI, MARY A
• Application Number:
  US10/072,997
• Publication Number:
  US 20020160586A1
• Time in Patent Office: 693 Days
• Field of Search: 438/166, 438/487, 438/16, 438/14, 427/8, 356/30
• US Class Current: 438/14
• CPC Class Codes: G01N 21/95 characterised by the material or shape of the object to be examined G01N21/89 - G01N21/91, G01N21/94 take precedence
• CPC Class Codes: H01L 29/66757 Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
• CPC Class Codes: H01L 29/78675 with normal-type structure, e.g. with top gate

Abstract

A method of evaluating a state of a polysilicon film objectively, accurately, automatically, and in a non-contact manner is provided. The method includes the steps of picking up a surface of a polysilicon film formed by excimer laser annealing, dividing the picked-up image into meshes each having a specific size, calculating a contrast in each of the meshes, extracting a highest contrast value and a lowest contrast value in the picked-up image, calculating a contrast ratio therebetween, and judging an average grain size of the polysilicon film on the basis of the contrast ratio.

Claims

1. A polysilicon evaluating method of evaluating a polysilicon film formed by annealing an amorphous silicon film, comprising the steps of:

picking up an image of a surface of the polysilicon film;

dividing the picked-up image into a plurality of regions and calculating a contrast in each of the regions divided from the picked-up image;

detecting a high contrast region and a low contrast region and comparing the contrasts in the high contrast and low contrast regions with each other; and

evaluating a state of the polysilicon film on the basis of the comparison result.

2. A polysilicon evaluating method according to claim 1, wherein a contrast ratio between the contrast in the low contrast region and the contrast in the high contrast region is calculated;

and

the state of the polysilicon film is evaluated on the basis of the contrast ratio.

3. A polysilicon evaluating method according to claim 1, wherein a polysilicon film, which is formed by subjecting an amorphous silicon film to laser annealing, is evaluated.

4. A polysilicon evaluating method according to claim 3, wherein a polysilicon film, which is formed by subjecting an amorphous silicon film to laser annealing using a linear laser beam with which a linear portion of the amorphous silicon film is irradiated, is evaluated.

5. A polysilicon evaluating method according to claim 4, wherein a polysilicon film, which is formed by subjecting an amorphous silicon film to excimer laser annealing, is evaluated.

6. A polysilicon evaluating system for evaluating a polysilicon film formed by annealing an amorphous silicon film, comprising:

pick-up means of picking up an image of a surface of the polysilicon film; and

evaluation means of dividing the picked-up image into a plurality of regions, calculating a contrast in each of the regions divided from the picked-up image, detecting a high contrast region and a low contrast region, comparing the contrasts in the high contrast and low contrast regions with each other, and evaluating the state of the polysilicon film on the basis of the comparison result.

7. A polysilicon evaluating system according to claim 6, wherein said evaluation means calculates a contrast ratio between the contrast in the low contrast region and the contrast in the high contrast region, and evaluates the state of the polysilicon film on the basis of the contrast ratio.

8. A polysilicon evaluating system according to claim 6, wherein a polysilicon film, which is formed by subjecting an amorphous silicon film to laser annealing is evaluated.

9. A polysilicon evaluating system according to claim 8, wherein a polysilicon film, which is formed by subjecting an amorphous silicon film to laser annealing using a linear laser beam with which a linear portion of the amorphous silicon film is irradiated, is evaluated.

10. A polysilicon evaluating system according to claim 9, wherein a polysilicon film, which is formed by subjecting an amorphous silicon film to excimer laser annealing, is evaluated.

11. A thin film transistor fabricating method of fabricating a thin film transistor, comprising:

amorphous silicon forming step of forming an amorphous silicon film;

polysilicon film forming step of forming a polysilicon film by annealing the amorphous silicon film; and

evaluating step of picking up an image of a surface of the polysilicon film, dividing the picked-up image into a plurality of regions, calculating a contrast in each of the regions divided from the picked-up image, detecting a high contrast region and a low contrast region, comparing the contrasts in the high contrast and low contrast regions, and evaluating the state of the polysilicon film on the basis of the comparison result.

12. A thin film transistor fabricating method according to claim 11, wherein in said evaluating step, a contrast ratio between the contrast in the low contrast region and the contrast in the high contrast region is calculated, and the state of the polysilicon film is evaluated on the basis of the contrast ratio.

13. A thin film transistor fabricating method according to claim 11, wherein in said polysilicon film forming step, the amorphous silicon film is subjected to laser annealing.

14. A thin film transistor fabricating method according to claim 13, wherein in said polysilicon film forming step, an amorphous silicon film is subjected to laser annealing using a linear laser beam with which a linear portion of the amorphous silicon film is irradiated.

15. A thin film transistor fabricating method according to claim 14, wherein in said polysilicon film forming step, an amorphous silicon film is subjected to excimer laser annealing.

16. A thin film transistor fabricating method according to claim 15, wherein in said evaluating step, an energy density of an excimer laser used for excimer laser annealing, which is given in said polysilicon film forming step, is controlled on the basis of the evaluated state of the polysilicon film.

17. A thin film transistor fabricating method according to claim 16, wherein in said evaluating step, the energy density of a laser beam used for excimer laser annealing is controlled such that a contrast ratio between the contrast in a low contrast region and the contrast in a high contrast region is higher than a specific value, and an area of a portion composed of continuous contrast low regions is smaller than a specific value.

18. A thin film transistor fabricating system for fabricating a thin film transistor, comprising:

an amorphous silicon forming device for forming an amorphous silicon film;

a polysilicon film forming device for forming a polysilicon film by annealing the amorphous silicon film; and

an evaluating device for picking up an image of a surface of the polysilicon film, dividing the picked-up image into a plurality of regions, calculating a contrast in each of the regions divided from the picked-up image, detecting a high contrast region and a low contrast region, comparing the contrasts in the high contrast and low contrast regions, and evaluating the state of the polysilicon film on the basis of the comparison result.

19. A thin film transistor fabricating system according to claim 18, wherein said evaluating device calculates a contrast ratio between the contrast in the low contrast region and the contrast in the high contrast region, and evaluates the state of the polysilicon film on the basis of the contrast ratio.

20. A thin film transistor fabricating system according to claim 18, wherein in said polysilicon film forming device, the amorphous silicon film is subjected to laser annealing.

21. A thin film transistor fabricating system according to claim 20, wherein in said polysilicon film forming device, an amorphous silicon film is subjected to laser annealing using a linear laser beam with which a linear portion of the amorphous silicon film is irradiated.

22. A thin film transistor fabricating system according to claim 21, wherein in said polysilicon film forming device, an amorphous silicon film is subjected to excimer laser annealing.

23. A thin film transistor fabricating system according to claim 22, wherein in said evaluating device, an energy density of an excimer laser used for excimer laser annealing, which is given by said polysilicon film forming device, is controlled on the basis of the evaluated state of the polysilicon film.

24. A thin film transistor fabricating system according to claim 23, wherein in said evaluating device, the energy density of a laser beam used for excimer laser annealing is controlled such that a contrast ratio between the contrast in a low contrast region and the contrast in a high contrast region is higher than a specific value, and an area of a portion composed of continuous contrast low regions is smaller than a specific value.