Growth of compound semiconductor structures on patterned oxide films and process for fabricating same

• US 6,673,646 B2
• Filed: 02/28/2001
• Issued: 01/06/2004
• Est. Priority Date: 02/28/2001
• Status: Expired due to Fees

• Current Assignee: Freescale Semiconductor, Inc. (NXP Semiconductors NV)
• Original Assignee: Motorola, Inc. (Motorola Solutions, Inc.)
• Inventors: Droopad, Ravindranath
• Primary Examiner(s): Coleman, William David
• Application Number:
  US09/795,784
• Publication Number:
  US 20020117664A1
• Time in Patent Office: 1,042 Days
• Field of Search: 438/85, 438/100, 438/269, 257/9, 257/35, 257/295
• US Class Current: 438/85
• CPC Class Codes: C30B 25/20 the substrate being of the same materials as the epitaxial layer
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02494 Structure
• CPC Class Codes: H01L 21/02505 consisting of more than two layers
• CPC Class Codes: H01L 21/02513 Microstructure
• CPC Class Codes: H01L 21/02521 Materials

Abstract

Compound semiconductor structures and devices can be grown on patterned oxide layers deposited on silicon. The deposition of Group II-VI and Group II-V compound semiconductors on patterned wafers results in an increase in the critical thickness for lattice mismatched layers and the relief of strain energy through side walls. As a result, high crystalline quality compound semiconductor material can be grown on less expensive and more accessible substrate to more cost effectively produce semiconductor components and devices having enhanced reliability.

Claims

1. A process for fabricating a semiconductor device structure comprising:

providing a monocrystalline semiconductor substrate;

epitaxially growing a monocrystalline oxide layer overlying the substrate, the oxide layer having a predetermined thickness and comprising a material selected from the group consisting of lanthanum aluminate, alkaline earth metal titanates, alkaline earth metal zirconates, alkaline earth metal hafnates, alkaline earth metal tantalates, alkaline earth metal ruthenates, and alkaline earth metal niobates;

growing an amorphous layer underlying the monocrystalline oxide layer by increasing the partial pressure of oxygen during the step of epitaxially growing a monocrystalline oxide layer to a partial pressure greater than that needed to grow the monocrystalline oxide layer;

photolithographically patterning and etching the monocrystalline oxide layer to form a plurality of oxide mesas; and

epitaxially growing a monocrystalline semiconductor layer overlying each of the oxide mesas.

2. The process of claim 1 wherein the step of photolithographically patterning and etching comprises the step of etching through the monocrystalline oxide layer to expose a portion of the semiconductor substrate.

3. The process of claim 1 wherein the step of photolithographically patterning and etching comprises the step of etching partially through the monocrystalline oxide layer to leave a shelf of monocrystalline oxide having a thickness less than the predetermined thickness between the plurality of oxide mesas.

4. The process of claim 3 further comprising the step of epitaxially growing a monocrystalline semiconductor layer overlying the shelf of monocrystalline oxide.

5. The process of claim 4 further comprising the step of planarizing the monocrystalline semiconductor layer overlying each of the oxide mesas and the monocrystalline semiconductor layer overlying the shelf of monocrystalline oxide.

6. The process of claim 5 wherein the step of planarizing comprises the step of chemical mechanical planarization to form a layer of monocrystalline semiconductor material having a substantially planar surface and having first regions of monocrystalline semiconductor material having a first thickness and second regions of monocrystalline semiconductor material having a second thickness.

7. The process of claim 6 further comprising the step of forming first semiconductor devices in the first regions and forming second semiconductor devices in the second regions.

8. The process of claim 1 wherein the step of epitaxially growing a monocrystalline semiconductor layer comprises the step of growing a layer comprising a material selected from the group consisting of Ge, Si—

Ge, III-V compounds, mixed III-V compounds, II-VI compounds, and mixed II-VI compounds.

9. The process of claim 1 wherein the step of epitaxially growing a monocrystalline semiconductor layer comprises the step of growing a layer comprising a material selected from the group consisting of GaAs, AlGaAs, InP, InGaAs, InGaP, ZnSe, and ZnSeS.

10. The process of claim 1 wherein each of the steps of epitaxially growing comprises epitaxially growing by a process selected from the group consisting of MBE, MOCVD, CBE, MOMBE, MEE, CVD, PVD, PLD, CSD and ALE.

11. The process of claim 1 further comprising the step of forming an integrated circuit component at least partially in the semiconductor substrate.

12. The process of claim 11 further comprising the step of forming a semiconductor component at least partially in the monocrystalline semiconductor layer overlying at least one of the plurality of oxide mesas.

13. The process of claim 12 further comprising the step of forming an electrical interconnection electrically coupling the integrated circuit component to the semiconductor component.

14. The process of claim 1 further comprising the step of thermally annealing the monocrystalline oxide layer after the step of epitaxially growing a monocrystalline semiconductor layer to convert the monocrystalline oxide layer to an amorphous oxide layer.

15. A process for fabricating a compound semiconductor device structure comprising the steps of:

providing a monocrystalline substrate comprising silicon;

epitaxially growing a first monocrystalline layer comprising (Ba,Sr)TiO₃ overlying the monocrystalline substrate;

during the step of epitaxially growing a first monocrystalline layer, forming an amorphous layer comprising silicon oxide underlying the first monocrystalline layer;

photolithographically patterning and etching the first monocrystalline layer to form a plurality of spaced apart oxide islands;

epitaxially growing a second monocrystalline layer comprising a compound semiconductor material overlying each of the oxide islands;

forming an integrated circuit at least partially in the substrate;

forming a plurality of semiconductor devices at least partially in the second monocrystalline layer, one overlying each of the oxide islands; and

electrically coupling the integrated circuit and each of the plurality of semiconductor devices.

16. The process of claim 15 further comprising the step of thermally annealing the first monocrystalline layer after the step of epitaxially growing a second monocrystalline layer to convert the first monocrystalline layer to an additional amorphous layer.

17. The process of claim 15 wherein each of the steps of epitaxially growing comprises epitaxially growing by a process selected from the group consisting of MBE, MOCVD, CBE, MOMBE, MEE, CVD, PVD, PLD, CSD and ALE.

18. The process of claim 15 wherein the step of epitaxially growing a second monocrystalline layer comprises the step of growing a layer comprising a compound semiconductor material selected from GaAs, AlGaAs, ZnSe, and ZnSSe.