×

Semiconductor device and method of producing the same

  • US 6,673,659 B2
  • Filed: 01/30/2001
  • Issued: 01/06/2004
  • Est. Priority Date: 01/31/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A method of producing a semiconductor device comprising the steps of:

  • forming an insulating film comprising a silicon oxynitride film on a substrate; and

    forming a semiconductor film on said insulating film, wherein said insulating film comprises at least a first layer in contact with said substrate and a second layer in contact with said semiconductor film, wherein said first layer is formed from SiH4, N2O, and H2, and wherein said second layer is formed from SiH4 and N2O.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×