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High-pressure anneal process for integrated circuits

  • US 6,673,726 B1
  • Filed: 03/24/1999
  • Issued: 01/06/2004
  • Est. Priority Date: 01/22/1996
  • Status: Expired due to Fees
First Claim
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1. A process for annealing an integrated circuit having a metal alloy conductor line forming a portion thereof, said process comprising:

  • placing the integrated circuit within a chamber;

    introducing a gas including hydrogen into the chamber, said gas having a partial pressure of hydrogen within the gas at least greater than 25 percent of gas pressure;

    pressurizing the chamber to a pressure greater than ambient atmospheric pressure using the gas; and

    elevating a temperature of the integrated circuit to a temperature within a range of about 300°

    C. to 500°

    C.

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