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ZnO compound semiconductor light emitting element

  • US 6,674,098 B1
  • Filed: 01/25/2002
  • Issued: 01/06/2004
  • Est. Priority Date: 07/26/1999
  • Status: Expired due to Fees
First Claim
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1. A ZnO based compound semiconductor light emitting device comprising:

  • a silicon substrate;

    a silicon nitride film formed on the surface of said silicon substrate; and

    a semiconductor layer lamination in which layers are laminated to form a light emitting layer, said layers having at least an n-type layer and a p-type layer which are formed on said silicon nitride film and also which are made of a ZnO based compound semiconductor.

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