Semiconductor device having driver circuit and pixel section provided over same substrate
First Claim
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1. A semiconductor device comprising:
- a driver circuit and a pixel section formed over the same substrate;
an n-channel TFT provided in said driver circuit over said substrate comprising a pair of high concentration impurity regions, a channel forming region provided between said high concentration impurity region, and a low concentration impurity region provided between said channel forming region and at least one of said high concentration impurity regions, said high concentration impurity region containing a Group 15 element in the Periodic Table therein; and
an n-channel TFT provided in said pixel section over said substrate and comprising a pair of high concentration impurity regions, a channel forming region provided between said high concentration impurity region, and a low concentration impurity region provided between said channel forming region and at least one of said high concentration impurity regions, said high concentration impurity region of said n-channel TFT in said pixel section containing a Group 15 element in the Periodic Table therein, wherein concentration of said Group 15 element contained in said high concentration impurity region of said TFT in said driver circuit is higher in comparison with concentration of said Group 15 element contained in said high concentration impurity region of said TFT in said pixel section.
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Abstract
In a manufacturing method of an active matrix type liquid crystal display device, a semiconductor device having good TFT characteristics is realized. LDD regions of a driver circuit NTFT and LDD regions of a pixel section NTFT are given different impurity concentration. An impurity is doped at differing concentrations using a mask. Thus a liquid crystal display device provided with a driver circuit having high speed operation and a pixel section with high reliability can be obtained.
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12 Claims
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1. A semiconductor device comprising:
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a driver circuit and a pixel section formed over the same substrate;
an n-channel TFT provided in said driver circuit over said substrate comprising a pair of high concentration impurity regions, a channel forming region provided between said high concentration impurity region, and a low concentration impurity region provided between said channel forming region and at least one of said high concentration impurity regions, said high concentration impurity region containing a Group 15 element in the Periodic Table therein; and
an n-channel TFT provided in said pixel section over said substrate and comprising a pair of high concentration impurity regions, a channel forming region provided between said high concentration impurity region, and a low concentration impurity region provided between said channel forming region and at least one of said high concentration impurity regions, said high concentration impurity region of said n-channel TFT in said pixel section containing a Group 15 element in the Periodic Table therein, wherein concentration of said Group 15 element contained in said high concentration impurity region of said TFT in said driver circuit is higher in comparison with concentration of said Group 15 element contained in said high concentration impurity region of said TFT in said pixel section. - View Dependent Claims (3, 5, 7, 9, 11)
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2. A semiconductor device comprising:
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a driver circuit and a pixel section formed over the same substrate;
an n-channel TFT provided in said driver circuit over said substrate comprising a channel forming region, a gate insulating film provided in contact with said channel forming region, and a gate electrode provided in contact with said gate insulating film, a pair of low concentration impurity regions sandwiching said channel forming region, and a high concentration impurity region provided in contact with corresponding one of said low concentration impurity regions, said high concentration impurity region containing a Group 15 element in the Periodic Table therein; and
an n-channel TFT provided in said pixel section over said substrate and comprising a channel forming region, a gate insulating film provided in contact with said channel forming region, and a gate electrode provided in contact with said gate insulating film, a pair of low concentration impurity regions sandwiching said channel forming region, and a high concentration impurity region provided in contact with corresponding one of said low concentration impurity regions, said high concentration impurity region of said n-channel TFT in said pixel section containing a Group 15 element in the Periodic Table therein, wherein at least one of said low concentration impurity regions of said n-channel TFT in said driver circuit overlaps with said gate electrode of said n-channel TFT of said driver circuit through said gate insulating film of said n-channel TFT of said driver circuit, and wherein concentration of said Group 15 element contained in said high concentration impurity region of said TFT in said driver circuit is higher in comparison with concentration of said Group 15 element contained in said high concentration impurity region of said TFT in said pixel section. - View Dependent Claims (4, 6, 8, 10, 12)
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Specification