Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same
First Claim
1. A three axis MEM tunneling sensor assembly for making a three axis MEM tunneling sensor therefrom, the assembly comprising:
- (a) orthogonally arranged beam structures, a resonator structure and associated mating structures defined on a first substrate or wafer;
(b) contact structures and mating structures defined on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer; and
(c) a pressure/heat sensitive bonding layer disposed on said mating structures on at least one of said first and second substrates or wafers for bonding the mating structures defined on the first substrate or wafer to mating structures on the second substrate or wafer in response to the application of pressure/heat therebetween.
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Abstract
A three axis MEM tunneling/capacitive sensor and method of making same. Cantilevered beam structures for at least two orthogonally arranged sensors and associated mating structures are defined on a first substrate or wafer, the at least two orthogonally arranged sensors having orthogonal directions of sensor sensitivity. A resonator structure of at least a third sensor is also defined, the third sensor being sensitive in a third direction orthogonal to the orthogonal directions of sensor sensitivity of the two orthogonally arranged sensors and the resonator structure having a mating structure thereon. Contact structures for at least two orthogonally arranged sensors are formed together with mating structures on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer. The mating structures of the first substrate are disposed in a confronting relationship with the mating structures of the second substrate or wafer. A eutectic bonding layer associated with one of the mating structures facilitates bonding between the respective mating structures. At least a portion of the first substrate or wafer is removed to release the cantilevered beam structures and the resonator structure.
44 Citations
88 Claims
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1. A three axis MEM tunneling sensor assembly for making a three axis MEM tunneling sensor therefrom, the assembly comprising:
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(a) orthogonally arranged beam structures, a resonator structure and associated mating structures defined on a first substrate or wafer;
(b) contact structures and mating structures defined on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer; and
(c) a pressure/heat sensitive bonding layer disposed on said mating structures on at least one of said first and second substrates or wafers for bonding the mating structures defined on the first substrate or wafer to mating structures on the second substrate or wafer in response to the application of pressure/heat therebetween. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 44)
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26. A three axis MEM tunneling sensor assembly comprising:
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(a) orthogonally arranged beam structures, an associated resonator structure and associated mating structures arranged on a first substrate or wafer;
(b) contact structures and associated mating structures defined on a second substrate or wafer, the mating structures on the second substrate or wafer being of a complementary shape to the mating structures on the first substrate or wafer; and
(c) an eutectic bonding layer disposed on said mating structures on at least one of the substrates or wafers for bonding the mating structures defined on the first substrate or wafer to mating structures on the second substrate or wafer in response to the application of pressure and heat therebetween, the mating structures being joined one to another at said eutectic bonding layer. - View Dependent Claims (27, 28, 29, 30, 31, 32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43)
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45. A three axis MEM tunneling/capacitive sensor, the sensor comprising:
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(a) a X-axis tunneling gyro disposed on a first substrate or wafer;
(b) a Y-axis tunneling gyro disposed on the first substrate or wafer;
(c) a Z-axis capacitive gyro disposed on the first substrate or wafer;
(d) a second substrate or wafer; and
(e) mating structures on at least one of said first and second substrates or wafers for mating the first substrate or wafer to the second substrate or wafer. - View Dependent Claims (46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57, 58, 59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69)
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70. A three axis MEM tunneling/capacitive sensor assembly comprising:
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(a) a first substrate or wafer formed of silicon;
(b) two orthogonally arranged tunneling sensors, each tunneling sensor including at least a cantilevered beam structure formed of silicon on said first substrate or wafer;
(c) an orthogonally arranged capacitive gyro having a resonator structure, the capacitive gyro being sensitive on an axis which is orthogonally disposed to the beam structures of the two tunneling sensors, the resonator structure being formed of silicon on said first substrate or wafer;
(d) a mating structure arranged on the first substrate or wafer;
(e) at least one contact structure and an associated mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer;
(f) an eutectic bonding layer disposed on said mating structure of at least one of the substrates or wafers for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate in response to the application of pressure and heat therebetween, the mating structures of the first and second substrates or wafers being joined one to another at said eutectic bonding layer; and
(g) the first substrate or wafer being dissolvable by a solvent while the beam structures and resonator structure formed on the first substrate or wafer are resistant to being dissolved by said solvent. - View Dependent Claims (71, 72, 73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88)
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Specification