Output stage of a charge pump circuit providing relatively stable output voltage without voltage degradation

• US 6,674,317 B1
• Filed: 09/18/2002
• Issued: 01/06/2004
• Est. Priority Date: 09/18/2002
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chou, Shao Yu
• Primary Examiner(s): ZWEIZIG, JEFFERY SHAWN
• Application Number:
  US10/246,275
• Time in Patent Office: 475 Days
• Field of Search: 327/530, 327/534, 327/535, 327/536, 327/537
• US Class Current: 327/536
• CPC Class Codes: H02M 3/073 Charge pumps of the Schenkel-type

Abstract

An output stage and method for a charge pump circuit which substantially reduces the degradation of the output voltage. A first NMOS transistor has its source connected to an input node and its drain connected to a second node. A second NMOS transistor has its source connected to the input node, its gate connected to the drain of the first NMOS transistor, and its drain connected to the gate of the first NMOS transistor. A capacitor is connected between a second clock signal and the drain of the second NMOS transistor. Another capacitor is connected between a first clock signal and an intermediate node. The key part of the invention is a diode pair connected anode of one to the cathode of the other and inserted between the intermediate node and the drain of the first NMOS transistor. This has the effect of changing a parallel combination of capacitors to a series combination of capacitors, thereby reducing the degradation of the output voltage and providing a stable voltage to the gate of an NMOS transistor switch in the output of the circuit.

Claims

1. A charge pump output stage, comprising:

an input node, a second node, a first clock node, and a second clock node;

a first transistor, wherein said first transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said input node, a gate, and a drain connected to said second node;

a second transistor, wherein said second transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said input node, a gate connected to said drain of said first transistor, and a drain connected to said gate of said first transistor;

a first diode having an anode and a cathode wherein said cathode of said first diode is connected to said drain of said first transistor;

a second diode having an anode and a cathode wherein said anode of said second diode is connected to said drain of said first transistor and said cathode of said second diode is connected to said anode of said first diode;

a first capacitor connected between said first clock node and said anode of said first diode; and

a second capacitor connected between said second clock node and said drain of said second transistor.

2. The charge pump output stage of claim 1, wherein said second node is connected to an N channel metal oxide semiconductor field effect transistor switch.

3. The charge pump output stage of claim 1, wherein said input node is connected to a multistage charge pump circuit.

4. The charge pump output stage of claim 1, wherein said input node is connected to a four phase charge pump circuit.

5. The charge pump output stage of claim 1, wherein said input node is connected to a four stage charge pump circuit.

6. The charge pump output stage of claim 1, wherein said first capacitor has a capacitance of between about 0.6 and 0.8 picofarads.

7. The charge pump output stage of claim 1, wherein said second capacitor has a capacitance of between about 0.06 and 0.08 picofarads.

8. The charge pump output stage of claim 1, wherein the voltage at the second clock node is low when the voltage at the first clock node is high.

9. The charge pump output stage of claim 1, wherein the voltage at the first clock node is low when the voltage at the second clock node is high.

10. The charge pump output stage of claim 1 wherein said first diode is replaced by a third transistor, said third transistor is a metal oxide semiconductor field effect transistor connected in diode mode, said second diode is replaced by a fourth transistor, and said fourth transistor is a metal oxide semiconductor field effect transistor connected in diode mode.

11. The charge pump output stage of claim 1, further comprising:

an output node;

a ground node; and

a third transistor wherein said third transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said second node, a gate connected to said second node, and a source connected to said output node.

12. A voltage multiplier circuit, comprising:

a multistage charge pump circuit having a first output node;

a first node connected to said first output node;

a second node, a first clock node, and a second clock node;

a first transistor, wherein said first transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said first node, a gate, and a drain connected to said second node;

a second transistor, wherein said second transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said first node, a gate connected to said drain of said first transistor, and a drain connected to said gate of said first transistor;

a first diode having an anode and a cathode wherein said cathode of said first diode is connected to said drain of said first transistor;

a second diode having an anode and a cathode wherein said anode of said second diode is connected to said drain of said first transistor and said cathode of said second diode is connected to said anode of said first diode;

a first capacitor connected between said first clock node and said anode of said first diode; and

a second capacitor connected between said second clock node and said drain of said second transistor.

13. The voltage multiplier circuit of claim 12 further comprising an N channel metal oxide semiconductor field effect transistor switch connected to said second node.

14. The voltage multiplier circuit of claim 13, wherein said N channel metal oxide semiconductor field effect transistor switch comprises:

a second output node;

a ground node; and

a third transistor wherein said third transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said second node, a gate connected to said second node, and a drain connected to said second output node.

15. The voltage multiplier circuit of claim 12, wherein said multistage charge pump circuit is a four phase charge pump circuit.

16. The voltage multiplier circuit of claim 12, wherein said multistage charge pump circuit is a two phase charge pump circuit.

17. The voltage multiplier circuit of claim 12, wherein said first capacitor has a capacitance of between about 0.6 and 0.8 picofarads.

18. The voltage multiplier circuit of claim 12, wherein said second capacitor has a capacitance of between about 0.06 and 0.08 picofarads.

19. The voltage multiplier circuit of claim 12, wherein the voltage at the second clock node is low when the voltage at the first clock node is high.

20. The voltage multiplier circuit of claim 12, wherein the voltage at the first clock node is low when the voltage at the second clock node is high.

21. The voltage multiplier circuit of claim 12 wherein said first diode is replaced by a third transistor, said third transistor is a metal oxide semiconductor field effect transistor connected in diode mode, said second diode is replaced by a fourth transistor, and said fourth transistor is a metal oxide semiconductor field effect transistor connected in diode mode.

22. A method of providing a stable output voltage for a voltage multiplier circuit, comprising:

providing a multistage charge pump circuit having a first output node;

providing a first node connected to said first output node;

providing a second node, a first clock node, and a second clock node;

providing a first transistor, wherein said first transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said first node, a gate, and a drain connected to said second node;

providing a second transistor, wherein said second transistor is an N channel metal oxide semiconductor field effect transistor having a source connected to said first node, a gate connected to said drain of said first transistor, and a drain connected to said gate of said first transistor;

providing a first diode having an anode and a cathode;

providing a second diode having an anode and a cathode;

connecting said cathode of said first diode to said drain of said first transistor;

connecting said anode of said second diode to said drain of said first transistor and said cathode of said second diode to said anode of said first diode;

connecting a first capacitor between said first clock node and said anode of said first diode; and

connecting a second capacitor between said second clock node and said drain of said second transistor.

23. The method of claim 22 further comprising connecting an N channel metal oxide semiconductor field effect transistor switch to said second node.

24. The method of claim 23 wherein said N channel metal oxide semiconductor field effect transistor switch comprises:

providing a second output node;

providing a ground node; and

providing a third transistor wherein said third transistor is an N channel metal oxide semiconductor field effect transistor having a source, a gate, and a drain;

connecting said source of said third transistor to said second node;

connecting said gate of said third transistor to said second node; and

connecting said drain of said third transistor to said second output node.

25. The method of claim 22 wherein said multistage charge pump circuit is a four phase charge pump circuit.

26. The method of claim 22 wherein said multistage charge pump circuit is a two phase charge pump circuit.

27. The method of claim 22 wherein said first capacitor has a capacitance of between about 0.6 and 0.8 picofarads.

28. The method of claim 22 wherein said second capacitor has a capacitance of between about 0.06 and 0.08 picofarads.

29. The method of claim 22 wherein the voltage at the second clock node is low when the voltage at the first clock node is high.

30. The method of claim 22 wherein the voltage at the first clock node is low when the voltage at the second clock node is high.

31. The method of claim 22 wherein said first diode is replaced by a third transistor, said third transistor is a metal oxide semiconductor field effect transistor connected in diode mode, said second diode is replaced by a fourth transistor, and said fourth transistor is a metal oxide semiconductor field effect transistor connected in diode mode.