Dense metal programmable ROM with the terminals of a programmed memory transistor being shorted together
First Claim
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1. A metal programmable ROM, comprising:
- a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection; and
a programmed memory cell associated with the group of memory cells, wherein the programmed memory cell includes a shorted transistor.
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Abstract
A metal programmable ROM includes a memory cell array having a depth defined by a plurality of wordlines and a width defined by a plurality of bitlines. In addition, a group of memory cells are coupled between a bitline and a ground conection, with each memory cell in the memory cell group coupled to at least one other memory cell in the memory cell group. Finally, a programmed memory cell is defined by a memory cell transistor having its terminals shorted together.
19 Citations
13 Claims
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1. A metal programmable ROM, comprising:
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a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection; and
a programmed memory cell associated with the group of memory cells, wherein the programmed memory cell includes a shorted transistor. - View Dependent Claims (2, 3, 4, 5, 7, 8)
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6. A metal programmable ROM, comprising:
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a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection; and
a programmed memory cell associated with the group of memory cells, wherein the programmed memory cell includes a shorted transistor, and wherein read operations are performed by pulling a selected wordline coupled to a memory cell in the group of memory cells low, and asserting all other wordlines coupled to memory cells in the group of memory cells high.
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9. A metal programmable ROM, comprising:
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a group of memory cells, wherein each memory cell is connected to a corresponding wordline, and wherein each of the memory cells in the group of memory cells is interconnected between a single bitline connection and a ground conection, wherein read operations are performed by pulling a selected wordline coupled to a memory cell in the group of memory cells low, and asserting all other wordlines coupled to memory cells in the group of memory cells high. - View Dependent Claims (10, 11, 12, 13)
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Specification