Magnetoresistive random access memory (MRAM) cell patterning

• US 6,677,165 B1
• Filed: 03/20/2003
• Issued: 01/13/2004
• Est. Priority Date: 03/20/2003
• Status: Expired due to Term

• Current Assignee: Ovonyx Memory Technology, LLC (Micron Technology, Inc.)
• Original Assignee: Micron Technology, Inc.
• Inventors: Lu, Yong, Zhu, Theodore
• Primary Examiner(s): Fourson, George
• Assistant Examiner(s): GARCIA, JOANNIE A
• Application Number:
  US10/393,713
• Time in Patent Office: 299 Days
• Field of Search: 438/3, 438/73, 438/240, 438/396, 438/629, 438/637, 438/694, 438/700, 438/702, 438/703, 438/758
• US Class Current: 438/3
• CPC Class Codes: H10B 61/00 Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
• CPC Class Codes: H10N 50/01 Manufacture or treatment
• CPC Class Codes: Y10S 438/951 Lift-off

Abstract

A process that advantageously forms MRAM cells without the application of ion beam milling processes. Unlike conventional processes that rely on ion beam milling processes to remove materials from a magnetoresistive sandwich from areas other than areas that will later form MRAM cell bodies, this process forms a layer of photoresist over areas other than those areas that correspond to MRAM cell bodies. The photoresist is lifted off after the deposition of a magnetoresistive sandwich that forms the MRAM cell bodies, thereby safely removing the magnetoresistive sandwich from undesired areas while maintaining the magnetoresistive sandwich in the areas corresponding to MRAM cell bodies.

Claims

1. A process to produce a cell body in a magnetoresistive random access memory (MRAM), the process comprising:

forming an insulating layer on a substrate assembly;

forming a layer of photoresist over the insulating layer;

removing a portion of the layer of photoresist from a region the cell body is to be produced;

patterning a trench in the insulating layer through the removed portion of the layer of photoresist, where the trench is adapted to accommodate the cell body;

forming a magnetoresistive sandwich on remaining portions of the layer of photoresist and on a bottom surface of the trench; and

lifting off the remaining portions of the layer of photoresist such that portions of the magnetoresistive sandwich formed on the photoresist are removed from the substrate assembly.

2. The process as defined in claim 1, further comprising:

forming a word line in the substrate assembly; and

forming the insulating layer on top of the word line.

3. The process as defined in claim 1, further comprising:

forming a word line in the substrate assembly;

forming the insulating layer on top of the word line; and

opening a window in the insulating layer to the word line such that a portion of the cell body makes electrical continuity with the word line.

4. The process as defined in claim 1, wherein the magnetoresistive sandwich corresponds to a giant magneto-resistance (GMR) sandwich.

5. The process as defined in claim 1, wherein the magnetoresistive sandwich corresponds to tunneling magneto-resistance (TMR) sandwich.

6. The process as defined in claim 1, wherein forming the magnetoresistive sandwich further comprises:

forming a hard layer of magnetic material;

forming a spacer layer; and

forming a soft layer of magnetic material.

7. The process as defined in claim 1, wherein forming the magnetoresistive sandwich further comprises:

forming a first layer of magnetic material;

forming a first spacer layer on the first layer of magnetic material;

forming a second layer of magnetic material on the first spacer layer;

forming a second spacer on the second layer of magnetic material; and

forming a third layer of magnetic material on the second spacer layer.

8. A process to form magnetoresistive cell bodies in a magnetoresistive random access memory (MRAM) comprising:

forming trenches in an insulating material, where bottom surfaces of the trenches correspond to first regions where magnetoresistive cell bodies are intended to be formed;

forming regions of photoresist in second regions of the insulating material, but not on first regions of the insulating material, where the second regions correspond to regions where magnetoresistive cell bodies are not intended to remain;

forming a sandwich of magnetoresistive materials on both the first regions and the second regions; and

lifting off the photoresist to remove the sandwich of magnetoresistive materials from the second regions, the sandwich of magnetoresistive material remaining in the first regions.

9. The process as defined in claim 8, wherein lifting off the photoresist comprises a photoresist stripping process.

10. The process as defined in claim 8, wherein lifting off the photoresist comprises a semiconductor micromachining process.

11. The process as defined in claim 8, wherein the insulating material is silicon nitride.