Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate

• US 6,677,173 B2
• Filed: 03/28/2001
• Issued: 01/13/2004
• Est. Priority Date: 03/28/2000
• Status: Expired due to Fees

• Current Assignee: Pioneer Corporation
• Original Assignee: Pioneer Corporation
• Inventors: Ota, Hiroyuki
• Primary Examiner(s): Mulpuri, Savitri
• Application Number:
  US09/818,941
• Publication Number:
  US 20010055324A1
• Time in Patent Office: 1,021 Days
• Field of Search: 438/460-464, 438/455-459, 438/33, 438/46, 438/47
• US Class Current: 438/22
• CPC Class Codes: H01S 5/0202 Cleaving
• CPC Class Codes: H01S 5/0213 Sapphire, quartz or diamond based substrates
• CPC Class Codes: H01S 5/0215 Bonding to the substrate
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H01S 5/04252 characterised by the material
• CPC Class Codes: H01S 5/04257 having positive and negative electrodes on the same side of the substrate
• CPC Class Codes: H01S 5/22 having a ridge or stripe structure
• CPC Class Codes: H01S 5/32341 blue laser based on GaN or GaP

Abstract

The disclosure is a method of manufacturing a nitride semiconductor laser wherein a plurality of crystal layers made of group III nitride semiconductors, including an active layer, are successively stacked on an underlayer. The method includes the steps of forming the plurality of crystal layers on the underlayer formed on a substrate, forming an electrode layer on the outermost surface of the crystal layers, plating a metal film onto the electrode layer, irradiating an interface between the substrate and the underlayer with light through the substrate toward so as to form a region of decomposed substances of the nitride semiconductor, delaminating the underlayer that supports the crystal layers from the substrate along the decomposed substance region, and cleaving the underlayer with the crystal layers so as to form cleaved planes constituting a laser resonator.

Claims

1. A method of manufacturing a nitride semiconductor laser having a plurality of crystal layers made of group III nitride semiconductors including an active layer and successively stacked on an underlayer made of a group III nitride semiconductor, comprising the steps of:

forming a plurality of crystal layers on the underlayer formed on a first substrate;

forming an electrode layer on an outermost surface of said crystal layers;

plating with metal the electrode layer to form an auxiliary substrate with which the plurality of crystal layers is lined;

irradiating an interface between the first substrate and said underlayer with light to form a region of decomposed substances of the nitride semiconductor;

delaminating said underlayer that supports said crystal layers, from said first substrate along the decomposed substance region; and

cleaving said underlayer with said crystal layers thereon together with the auxiliary substrate to form cleaved mirrors.

2. A method as defined in claim 1, further comprising a step of forming insulating stripes which extend parallel to an extending direction of the cleavage planes to be formed in said nitride semiconductors, on said electrode layer before plating of the metal so that depositions of the metal are forestalled on the insulating stripes.

3. A method as defined in claim 2, wherein scribing lines are formed on said crystal layers parallel to the insulating stripes, whereupon said underlayer that supports said crystal layers is cleaved at said cleavage step.

4. A method as defined in claim 1, wherein the auxiliary substrate is made of copper.

5. A method as defined in claim 1, wherein, in said light irradiation step, light to be applied is selected from a group of light having a wavelength which passes through said first substrate and which is absorbed by a part of said underlayer vicinal to the interface.

6. A method ad defined in claim 1, wherein at said light irradiation step, the irradiation is performed uniformly over the interface between the first substrate and the underlayer or by scanning the interface with a spot or with a line of sight.

7. A method as defined in claim 1, wherein said crystal layer formation step includes the step of forming waveguides which extend perpendicular to the cleavage planes to be formed in said nitride semiconductors.

8. A method as defined in claim 1, wherein said crystal layers are formed by metal organic chemical vapor deposition.

9. A method as defined in claim 1, wherein, in said light irradiation step, light to be applied is an ultraviolet ray generated from a frequency quadrupled YAG laser.

10. A method for separating a first substrate from a nitride semiconductor wafer which is obtained by successively stacking at least one crystal layer made of group III nitride semiconductor on the first substrate, comprising the steps of:

plating with metal an outermost surface of the crystal layer to form an auxiliary substrate with which the crystal layer is lined;

irradiating an interface between the first substrate and said crystal layer through the first substrate to form a region of decomposed substances of the nitride semiconductor; and

delaminating said crystal layer together with the auxiliary substrate from said first substrate along the decomposed substance region.

11. A method as defined in claim 10, further comprising a step of forming an electrode layer on the outermost surface of said crystal layer before plating of the metal so that the electrode layer is plated with the metal.

12. A method as defined in claim 10, wherein the auxiliary substrate is made of copper.

13. A method as defined in claim 10, wherein, in said light irradiation step, light to be applied is selected from a group of light having a wavelength which passes through said first substrate and which is absorbed by a part of said crystal layer vicinal to the interface.

14. A method as defined in claim 10, wherein at said light irradiation step, the light is applied onto an interface between said first substrate and said crystal layer, uniformly or while scanning said interface in a spot or line shape.

15. A method as defined in claim 10, wherein, in said light irradiation step, light to be applied is an ultraviolet ray generated from a frequency quadrupled YAG laser.