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Method of manufacturing a nitride semiconductor laser with a plated auxiliary metal substrate

  • US 6,677,173 B2
  • Filed: 03/28/2001
  • Issued: 01/13/2004
  • Est. Priority Date: 03/28/2000
  • Status: Expired due to Fees
First Claim
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1. A method of manufacturing a nitride semiconductor laser having a plurality of crystal layers made of group III nitride semiconductors including an active layer and successively stacked on an underlayer made of a group III nitride semiconductor, comprising the steps of:

  • forming a plurality of crystal layers on the underlayer formed on a first substrate;

    forming an electrode layer on an outermost surface of said crystal layers;

    plating with metal the electrode layer to form an auxiliary substrate with which the plurality of crystal layers is lined;

    irradiating an interface between the first substrate and said underlayer with light to form a region of decomposed substances of the nitride semiconductor;

    delaminating said underlayer that supports said crystal layers, from said first substrate along the decomposed substance region; and

    cleaving said underlayer with said crystal layers thereon together with the auxiliary substrate to form cleaved mirrors.

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