Semiconductor laser apparatus and method of producing the same

• US 6,677,184 B2
• Filed: 11/15/2002
• Issued: 01/13/2004
• Est. Priority Date: 02/07/2000
• Status: Expired due to Fees

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Inventors: Kohashi, Ikuo
• Primary Examiner(s): Picardat, Kevin M.
• Application Number:
  US10/294,554
• Publication Number:
  US 20030063640A1
• Time in Patent Office: 424 Days
• Field of Search: 438/26, 438/28, 438/107, 438/108, 438/118, 438/119, 438/121, 438/125
• US Class Current: 438/118
• CPC Class Codes: H01L 2224/83192 wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
• CPC Class Codes: H01S 5/023 Mount members, e.g. sub-mount members
• CPC Class Codes: H01S 5/0233 Mounting configuration of laser chips
• CPC Class Codes: H01S 5/0235 Method for mounting laser chips
• CPC Class Codes: H01S 5/0236 using an adhesive

Abstract

In a method of producing a semiconductor laser apparatus, a conductive die-bonding paste is applied to a bonding surface in a predetermined position thereof and then preheated at a temperature equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction. Then, with a semiconductor laser chip placed on the preheated conductive die-bonding paste, the latter is heated to be hardened. In the thus produced semiconductor laser apparatus, a highest position at which the conductive die-bonding paste adheres to end surfaces of the semiconductor laser chip is at a height of more than 0.01 mm from the bonding surface, but is below light-emitting points of the semiconductor laser chip.

Claims

1. A method of producing a semiconductor laser apparatus, comprising the steps of:

applying a conductive die-bonding paste to a bonding surface in a predetermined position thereof;

preheating the applied conductive die-bonding paste and then placing a semiconductor laser chip on the preheated conductive die-bonding paste; and

heating the preheated conductive die-bonding paste to a temperature higher than a temperature at which the conductive die-bonding paste starts a thermosetting reaction to thereby harden the conductive die-bonding paste.

2. A method according to claim 1, wherein a temperature at which the conductive die-bonding paste is preheated is equal to or higher than a temperature at which a diluent of the conductive die-bonding paste starts to transpire, but lower than a temperature at which the conductive die-bonding paste starts a thermosetting reaction.

3. A method according to claim 1, wherein said conductive die-bonding paste contains an epoxy resin as a base material and is preheated at a temperature of 60°

C. or more but lower than 100°

C.

4. A method according to claim 3, wherein said conductive die-bonding paste is preheated at a temperature of 60°

C. to 80°

C. inclusive.

5. A method according to claim 1, wherein the preheating is performed until the conductive die-bonding paste becomes as thin as about 0.02 mm.

6. A method according to claim 1, wherein the preheating is performed for two seconds or more.

7. A semiconductor laser apparatus produced by the method of claim 1.

8. The method of claim 1, wherein the conductive dye-bonding paste adheres to a lower part of each end surface of the chip, and a highest position of the conductive dye-bonding paste on the lower part of each end surface of the chip is at a height of more than 0.01 mm from the bonding surface and hence from the bottom of the chip, but is below the light-emitting point of the chip.

9. The method of claim 1, wherein the conductive dye-bonding paste comprises epoxy resin and at least 80% by weight conductive filler of metal particles and/or flakes.