Semiconductor integrated circuit device and method of producing the same

• US 6,677,195 B2
• Filed: 02/21/2003
• Issued: 01/13/2004
• Est. Priority Date: 07/06/1999
• Status: Expired due to Term

• Current Assignee: Panasonic Semiconductor Solutions Co., Ltd. (Winbond Electronics Corporation)
• Original Assignee: Matsushita Electric Corporation (Panasonic Holdings Corporation)
• Inventors: Tsuura, Katsuhiko
• Primary Examiner(s): Dang, Phuc T.
• Application Number:
  US10/369,548
• Publication Number:
  US 20030146491A1
• Time in Patent Office: 326 Days
• Field of Search: 438/6, 438/15, 438/132, 438/210, 438/215, 438/454, 438/601, 438/622, 438/637, 438/640
• US Class Current: 438/215
• CPC Class Codes: H01L 23/5258 the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A semiconductor integrated circuit device has: a layer insulating film formed on a semiconductor substrate; a fuse portion which is configured by an uppermost metal wiring layer that is formed on the layer insulating film; an inorganic insulating protective film which is formed on the metal wiring layer and the layer insulating film; and an organic insulating protective film which is formed on the inorganic insulating protective film. An opening is formed in the organic insulating protective film so that the inorganic insulating protective on the fuse portion is exposed. According to this configuration, it is not required to etch away the layer insulating film in order to form an opening above the fuse portion. Therefore, the time period required for forming the opening can be shortened and the whole production time period can be shortened. Since only the inorganic insulating protective film is formed above the fuse portion, the cutting off of the fuse portion can be performed without excessively increasing the irradiation energy of a laser beam. Therefore, high reliability and high productivity can be realized without causing the lowering of the reliability and the reduction of the production yield which are due to the cutting off of the fuse portion. Since the fuse portion is covered with the inorganic insulating protective film, the moisture resistance can be improved.

Claims

1. A semiconductor integrated circuit device having a plurality of wiring layers, said device comprising:

a layer insulating film formed over a semiconductor substrate,

a plug electrode which is formed in a contact hole that is disposed in said layer insulating film; and

a fuse portion which is configured by a metal wiring layer that is formed on said layer insulating film,

said plug electrode being connected to a bottom portion of said fuse portion.

2. A semiconductor integrated circuit device according to claim 1, wherein said plug electrode is formed in a plural number and said plug electrodes are connected respectively to both sides which are positioned across a part of said fuse portion where cutting off is to be performed.

3. A semiconductor integrated circuit device according to claim 1, wherein said fuse portion is formed by an uppermost metal wiring layer of said plurality of wiring layers.

4. A semiconductor integrated circuit device according to claim 2, wherein said fuse portion is formed by an uppermost metal wiring layer of said plurality of wiring layers.

5. A semiconductor integrated circuit device according to claim 1, wherein said metal wiring layer contains an aluminum metal or an aluminum alloy which serves at least as a main conducting metal layer.

6. A semiconductor integrated circuit device according to claim 5, wherein in said fuse portion, a barrier metal layer is formed in at least a part of a layer below said main conducting metal layer.

7. A semiconductor integrated circuit device according to claim 5, wherein said plug electrode is made of tungsten, and a barrier metal layer is formed below said plug electrode.

8. A semiconductor integrated circuit device according to claim 2, wherein said metal wiring layer contains an aluminum metal or an aluminum alloy which serves at least as a main conducting metal layer.

9. A semiconductor integrated circuit device according to claim 2, wherein in said fuse portion, a barrier metal layer is formed in at least a part of a layer below said main conducting metal layer.

10. A semiconductor integrated circuit device according to claim 8, wherein said plug electrode are made of tungsten, and barrier metal layers are formed respectively below said plug electrode.

11. A semiconductor integrated circuit device according to claim 1, wherein said metal wiring layer contains copper which serve least as a main conducting metal layer.

12. A semiconductor integrated circuit device according to claim 11, wherein in said fuse portion, a barrier metal layer is formed in at least a part of a layer below said main conducting metal layer.

13. A semiconductor integrated circuit device according to claim 11, wherein said plug electrode is made of copper, and a barrier metal layer is formed below said plug electrode.

14. A semiconductor integrated circuit device according to claim 2, wherein said metal wiring layer contains copper which serves at least as a main conducting metal layer.

15. A semiconductor integrated circuit device according to claim 14, wherein in said fuse portion, a barrier metal layer is formed in at least a part of a layer below said main conducting metal layer.

16. A semiconductor integrated circuit device according to claim 14, wherein said plug electrode is made of copper, and a barrier metal layer is formed below said plug electrode.

17. A semiconductor integrated circuit device according to claim 1, wherein an inorganic insulating protective film is formed on said metal wiring layer and said layer insulating film.

18. A semiconductor integrated circuit device according to claim 17, wherein said inorganic insulating protective film on said fuse portion has a thickness which is not smaller than 0.1 μ

m and not larger than 0.8 μ

m.

19. A semiconductor integrated circuit device according to claim 2, wherein an inorganic insulating protective film is formed on said metal wiring layer and said layer insulating film.

20. A semiconductor integrated circuit device according to claim 19, wherein said inorganic insulating protective film on said fuse portion has a thickness which not smaller than 0.1 μ

m and than 0.8 μ

m.

21. A semiconductor integrated circuit device according to claim 1, wherein a wiring width of said part of said fuse portion where cutting off is to be performed is not smaller than 0.1 μ

m and not larger than 1.0 μ

m.

22. A semiconductor integrated circuit device according to claim 2, wherein a wiring width of said part of said fuse portion where cutting of f is to be performed is not smaller than 1.0 μ

m and not larger than 1.0 μ

m.

23. A semiconductor integrated circuit device according to claim 1, wherein said metal wiring layer comprises at least a main conducting metal layer, and said main conducting metal layer of said fuse portion and said plug electrode are made of copper and integrally formed.

24. A semiconductor integrated circuit device according to claim 2, wherein said metal wiring layer comprises at least a main conducting metal layer, and said main conducting metal layer of said fuse portion, and said plug electrodes are made of copper and integrally formed.