Endpoint detection in the etching of dielectric layers

• US 6,677,246 B2
• Filed: 12/06/2001
• Issued: 01/13/2004
• Est. Priority Date: 03/23/2001
• Status: Active Grant

• Current Assignee: Lam Research Corporation
• Original Assignee: Scientific Systems Research Limited
• Inventors: Hopkins, Michael B., Scanlan, John
• Primary Examiner(s): CHEN, KIN CHAN
• Application Number:
  US10/021,324
• Publication Number:
  US 20020048960A1
• Time in Patent Office: 768 Days
• Field of Search: 438/9, 438/10, 438/706, 438/710, 438/714, 438/723, 216/59, 216/60, 216/61, 216/63, 216/67
• US Class Current: 438/723
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics

Abstract

In a method of manufacturing a miniature multilayer device 10 a low open area dielectric layer 18 is selectively etched through to an underlying conductive region 16 using an electrically conducting medium such as a plasma 24. The endpoint of the etch process is determined by detecting the abrupt change in capacitance across the device 10 just as the final portion of the dielectric layer is removed.

Claims

1. A method of manufacturing a miniature multilayer device in which a low open area dielectric layer is selectively etched through to an underlying conductive region using an electrically conductive medium such that during said etching the partially etched and non-etched areas represent parallel capacitors, wherein the endpoint of the etch process is determined by detecting the abrupt change in total capacitance across the device just as the final portion of the dielectric layer is removed.

2. A method as claimed in claim 1, wherein the open area is less than 5%.

3. A method as claimed in claim 1 or 2, wherein the conducting medium is a plasma.

4. A method as claimed in claim 3, wherein the plasma is generated by an RF source, and the change in capacitance is detected by analyzing the characteristics of the drive signal applied to the plasma.

5. A method as claimed in claim 4, wherein the change in capacitance is detected by analysing at least one harmonic of the drive signal.

6. A method as claimed in claim 5, wherein the harmonic is analysed using multivariate analysis.

7. A method as claimed in claim 1, wherein the device is a semiconductor integrated circuit.

8. A method as claimed in claim 7, wherein the open area comprises at least one via hole in the dielectric layer.

9. A method as claimed in claim 7, wherein the open area comprises at least one device contact hole in the dielectric layer.