Wavelength sensitive device for wavelength stabilization

• US 6,678,293 B2
• Filed: 11/05/2002
• Issued: 01/13/2004
• Est. Priority Date: 11/05/2001
• Status: Active Grant

• Current Assignee: Broadcom International Pte Ltd. (Broadcom, Inc.)
• Original Assignee: Agilent Technologies, Inc.
• Inventors: Masini, Gianlorenzo, Colace, Lorenzo
• Primary Examiner(s): Scott, Jr., Leon
• Application Number:
  US10/288,326
• Publication Number:
  US 20030085441A1
• Time in Patent Office: 434 Days
• Field of Search: 372/32, 372/29.02, 372/38.1, 257/440
• US Class Current: 372/32
• CPC Class Codes: H01L 31/03046 including ternary or quaternary compounds, e.g. GaAlAs, InGaAs, InGaAsP
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type
• CPC Class Codes: H01L 31/109 the potential barrier being of the PN heterojunction type
• CPC Class Codes: H01S 5/0264 for monitoring the laser-output
• CPC Class Codes: H01S 5/042 Electrical excitation ; Circuits therefor monolithically integrated laser drive components H01S5/0261
• CPC Class Codes: H01S 5/0687 Stabilising the frequency of the laser

Abstract

A device for stabilizing the operating wavelength (λ) of an electro-optical component having a nominal operating wavelength (λ₀) by a wavelength influencing circuit adapted to be driven by a control signal. The device comprises a semiconductor photodiode adapted to be impinged upon by the radiation generated and/or processed by the component and to generate an output signal which is indicative of a difference of the wavelength of the radiation ((λ) with respect to the nominal operating wavelength (λ₀, λ_i). The semiconductor photodiode includes a plurality of layers jointly defining two opposite diodes generating opposite photocurrents as a result of radiation impinging onto the photodiode. The opposite photocurrents are adapted to generate the control signal to effect the stabilization action.

Claims

1. A device for stabilizing the wavelength of an optical radiation in a component having a nominal operating wavelength by means of a wavelength influencing circuit adapted to be driven by a control signal, wherein said device comprises a semiconductor photodiode adapted to be impinged upon by said radiation to generate an output signal which is indicative of a difference of the wavelength of said radiation with respect to said nominal wavelength, wherein said semiconductor photodiode includes a plurality of layers jointly defining two diodes generating opposite photocurrents as a result of said radiation impinging onto said photodiode, said opposite photocurrents being adapted to generate said control signal.

2. The device of claim 1, wherein said opposite diodes are arranged to give opposite photocurrents substantially identical in intensity to yield a substantially zero output signal when said radiation impinging onto said photodiode is at said nominal operating wavelength.

3. The device of claim 1 or claim 2, wherein said layers of said photodiode include two active layers each defining a respective one of said opposite diodes.

4. The device of claim 3, wherein said active layers are of the InGaAsP and InGaAs types, respectively.

5. The device of claim 1, wherein the materials comprising said plurality of layers are selected so that said opposite photocurrents are generated as a result of said photodiode being impinged upon by a radiation having a given wavelength in a range corresponding to said nominal operating wavelength.

6. The device of claim 1, wherein said layers are monolithically grown on a common substrate.

7. The device of claim 6, wherein said substrate is an InP substrate.

8. The device of claim 6, wherein said plurality of layers includes, opposite to said substrate, a further n layer.

9. The device of claim 6, wherein said plurality of layers includes, opposite to said substrate, a contact layer.

10. The device of claim 9, wherein said contact layer is an InGaAs contact layer.

11. The device of claim 1, wherein said plurality of layers include the sequence of an n layer a first active layer, a p layer and a second active layer, wherein each of said active layers defines a respective one of said opposite diodes.

12. The device of claim 11, wherein said sequence of layers is grown on said substrate.

13. The device of claim 11, wherein said sequence of layers is topped by an InP spacer layer.

14. The device of claim 1, wherein said component is a laser source having a nominal emission wavelength as said nominal operating wavelength.

15. The device of claim 14, wherein said component is a gas sensing laser source having a nominal emission wavelength in the near infrared as said nominal operating wavelength.

16. The device of claim 1, wherein said wavelength influencing circuit includes at least one device selected from the group consisting of a thermal conditioning device, such as a Peltier cell, a device for controlling the junction temperature of a laser diode, a device for controlling the temperature for a single section DFB laser, a device for controlling the currents in proper sections of a DBR laser, a device for controlling the external mirror reflectivity or position for an external cavity laser.

17. The device of claim 1, wherein said component is a tuneable bandpass filter centered around a nominal filtering wavelength, wherein said nominal filtering wavelength constitutes said nominal operating wavelength.

18. The device of claim 17, wherein said wavelength influencing circuit includes at least one device adapted to vary said nominal filtering wavelength by resorting to thermal properties, by means of an external electrical field or by mechanical means.

19. The device of claim 1, wherein said device is integrated on a common substrate with said component and said wavelength influencing circuit.