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Metal anneal with oxidation prevention

  • US 6,679,951 B2
  • Filed: 11/13/2001
  • Issued: 01/20/2004
  • Est. Priority Date: 05/15/2000
  • Status: Active Grant
First Claim
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1. A process for annealing a metal layer on a semiconductor substrate in a reaction chamber comprising:

  • heating the substrate to a temperature suitable for annealing the metal; and

    contacting the substrate with one or more organic reducing agents during at least part of the time the substrate is sufficiently heated to cause oxidation of the metal layer.

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