Inductive plasma loop enhancing magnetron sputtering

• US 6,679,981 B1
• Filed: 05/11/2000
• Issued: 01/20/2004
• Est. Priority Date: 05/11/2000
• Status: Expired due to Fees

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Hanawa, Hiroji, Pan, Shaoher X., Forster, John C., Chen, Fusen
• Primary Examiner(s): MCDONALD, RODNEY GLENN
• Application Number:
  US09/569,736
• Time in Patent Office: 1,349 Days
• Field of Search: 204/298.06, 204/298.07, 204/298.16, 204/298.19, 204/298.31, 204/298.33, 204/298.34, 156/345.35, 156/345.48, 156/345.49, 118/723.R, 118/723.ME, 118/723.MR, 118/723.E, 118/723.ER, 118/723.I, 118/723.IR, 118/723.MP
• US Class Current: 204/298.06
• CPC Class Codes: H01J 37/321 the radio frequency energy being inductively coupled to the plasma
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering

Abstract

A plasma reaction chamber, particularly a DC magnetron sputter reactor, in which the plasma density and the ionization fraction of the plasma is increased by a plasma inductive loop passing through the processing space. A tube has its two ends connected to the vacuum chamber on confronting sides of the processing space. An RF coil powered by an RF power supply is positioned adjacent to the tube outside of the chamber and aligned to produce an RF magnetic field around the toroidal circumference of the tube such that an electric field is induced along the tube axis. Thereby, a plasma is generated in the tube in a loop circling through the processing space.

Claims

1. A plasma reaction chamber, comprising:

a vacuum chamber adapted to accommodate a substrate to be processed and having at least one pair of opposed ports formed through side walls of the chamber;

a respective tube connecting each of the pairs of the ports; and

a coil adapted for connection to an RF electrical power supply and disposed adjacent to the tube to encircle a circumference of the tube with an RF magnetic field.

2. The plasma reaction chamber of claim 1, further comprising a diode circuit adapted to induce a plasma in the vacuum chamber.

3. The plasma reaction chamber of claim 1, wherein said ports are disposed on sidewalls of said vacuum chamber in an area adjacent a surface of a substrate being processed.

4. The plasma reaction chamber of claim 1 configured as a plasma sputtering reactor.

5. The plasma reaction chamber of claim 1 configured as a plasma etch reactor.

6. The plasma reaction chamber of claim 1 configured as a chamber for plasma enhanced chemical vapor deposition.

7. A plasma reaction chamber comprising:

a vacuum chamber adapted to accommodate a substrate to be processed and having at least one pair of ports formed through walls of the chamber;

a respective tube connecting each of the pairs of the ports;

an RF electrical power supply;

a coil adapted for connection to the RF electrical power supply and disposed adjacent to the tube to encircle a circumference of the tube with an RF magnetic field; and

a pedestal having an upper side adapted to support a substrate to be processed and wherein the ports are disposed on a wall of the vacuum chamber facing a bottom side of the pedestal.

8. A DC magnetron sputtering reactor, comprising:

a vacuum chamber;

a pedestal within the chamber for supporting a substrate to be sputter coated;

a target sealed to the chamber comprising a material to be sputter coated;

a magnetron positioned in back of the target;

a DC power supply connected to the target;

a tube having two ends connected to the vacuum chamber;

an inductive coil positioned adjacent to the tube and disposed to produce a magnetic field encircling the tube; and

an RF power supply connected to the coil;

wherein the tube has its two ends connected to a side wall of the vacuum chamber between the target and the pedestal.

9. The reactor of claim 8, wherein the target is metallic.

10. The reactor of claim 9, wherein the target principally comprises copper.

11. A DC magnetron sputtering reactor, comprising:

a vacuum chamber;

a pedestal within the chamber for supporting a substrate to be sputter coated;

a target sealed to the chamber comprising a material to be sputter coated;

a magnetron positioned in back of the target;

a DC power supply connected to the target;

a tube having two ends connected to the vacuum chamber;

an inductive coil positioned adjacent to the tube and disposed to produce a magnetic field encircling the tube; and

an RF power supply connected to the coil;

wherein the tube has its two ends connected to a wall of the vacuum chamber on an opposite side of the pedestal from the target.