Method of micromechanical manufacturing of a semiconductor element, in particular an acceleration sensor

• US 6,679,995 B1
• Filed: 12/18/2001
• Issued: 01/20/2004
• Est. Priority Date: 12/14/1999
• Status: Expired due to Fees

• Current Assignee: Robert Bosch GmbH
• Original Assignee: Robert Bosch GmbH
• Inventors: Bueche, Dirk, Banjac, Branko, Fischer, Frank, Schielein, Doris
• Primary Examiner(s): ALANKO, ANITA KAREN
• Application Number:
  US09/913,458
• Time in Patent Office: 763 Days
• Field of Search: 216/2, 216/79, 216/80, 438/50, 735/143.2
• US Class Current: 216/2
• CPC Class Codes: B81C 1/00626 Processes for achieving a desired geometry not provided for in groups B81C1/00563 - B81C1/00619
• CPC Class Codes: B81C 2201/0109 Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: G01P 2015/0814 for translational movement of the mass, e.g. shuttle type

Abstract

A method of micromechanically manufacturing fixed and movable layer-like electrodes of a semiconductor element, for example, a capacitive acceleration sensor, which are exposed over a substrate over a certain area is provided. A sacrificial layer may be arranged between the substrate and the fixed and movable electrodes being removed in an etching step in order to expose the electrodes with respect to the substrate. The thickness of the sacrificial layer located in the area of the fixed electrodes may be less than the thickness of the sacrificial layer located in the area of the movable electrodes.

Claims

1. A method of micromechanically manufacturing a layered fixed electrode and a layered movable electrode of a semiconductor element, which are exposed over a substrate, over a certain area, comprising:

removing a sacrificial layer by etching to expose the fixed electrode and the movable electrode with respect to the substrate;

wherein;

the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode, the substrate being on a first side on the sacrificial layer, and the fixed electrode and the moveable electrode being on a second side of the sacrificial layer, the first side being a side opposite the second side; and

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode.

9. The method of claim 1, wherein the semiconductor element includes a capacitive acceleration sensor.

2. A method of micromechanically manufacturing a layered fixed electrode and a layered movable electrode of a semiconductor element, which are exposed over a substrate, over a certain area, comprising:

removing a sacrificial layer by etching to expose the fixed electrode and the movable electrode with respect to the substrate;

wherein;

the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode;

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode; and

wherein the first thickness of the fixed electrode is greater than the second thickness of the movable electrode, the removing of the sacrificial layer by etching.

3. A method of micromechanically manufacturing a layered fixed electrode and a layered movable electrode of a semiconductor element, which are exposed over a substrate, over a certain area, comprising:

removing a sacrificial layer by etching to expose the fixed electrode and the movable electrode with respect to the substrate;

wherein;

the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode;

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode; and

wherein the sacrificial layer underneath the first area of the fixed electrode includes a first sacrificial layer, and the sacrificial layer underneath the second area of the movable electrode includes the first sacrificial layer and a second sacrificial layer located above the first sacrificial layer.

4. The method of claim 3, further comprising:

applying the first sacrificial layer to an entire surface of the substrate so that the first sacrificial layer covers the first area and the second area where the fixed electrode and the movable electrode are subsequently formed;

applying a first conductive layer over the first sacrificial layer so that the first conductive layer only covers the first area where the fixed electrode is subsequently formed;

applying the second sacrificial layer to an entire surface of the first sacrificial layer and the first conductive layer so that the second sacrificial layer covers the first area and the second area where the fixed electrode and the movable electrode are subsequently formed;

opening the second sacrificial layer via the first conductive layer by a masked etching to expose the first conductive layer and to etch away a small depth portion of a depth of the first sacrificial layer to provide an exposed first conductive layer;

applying a relatively thick, doped epitaxial layer to an entire surface of the second sacrificial layer and the exposed first conductive layer to a thickness of the fixed layer-like electrode and a thickness of the movable electrode to be formed subsequently;

applying a mask patterning the fixed electrode and the movable electrode to a surface of the epitaxial layer and using the mask to etch ditches into the epitaxial layer to a depth delimited by a surface of the first sacrificial layer in the first area of the fixed electrode and by a surface of the second sacrificial layer in the second area of the movable electrode; and

isotropically etching the first sacrificial layer and the second sacrificial layer for providing approximately same undercutting rates of the sacrificial layer underneath the fixed electrode and of the sacrificial layer underneath the movable electrode;

wherein the steps are consecutively performed.

5. A method of micromechanically manufacturing a layered fixed electrode and a layered movable electrode of a semiconductor element, which are exposed over a substrate, over a certain area, comprising:

removing a sacrificial layer by etching to expose the fixed electrode and the movable electrode with respect to the substrate;

wherein;

the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode;

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode; and

wherein the thickness of the first sacrificial layer is in a range of 0.5 μ

m to 5 μ

m and the thickness of the second sacrificial layer is in a range of 0.5 μ

m to 3 μ

m.

6. A method of micromechanically manufacturing a layered fixed electrode and a layered movable electrode of a semiconductor element, which are exposed over a substrate, over a certain area, comprising:

removing a sacrificial layer by etching to expose the fixed electrode and the movable electrode with respect to the substrate;

wherein;

the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode;

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode; and

wherein the thickness of the fixed electrode is in a range of 1.5 μ

m to 20 μ

m.

7. A method of micromechanically manufacturing a layered fixed electrode and a layered movable electrode of a semiconductor element, which are exposed over a substrate, over a certain area, comprising:

removing a sacrificial layer by etching to expose the fixed electrode and the movable electrode with respect to the substrate;

wherein;

the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode;

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode; and

wherein the fixed electrode and the movable electrode are provided in a form of an electrode strip, a width of each electrode strip being in a range of 1 μ

m to 5 μ

m.

8. A micromechanically manufactured acceleration sensor comprising:

a layered fixed electrode;

a layered movable electrode;

a substrate wherein the fixed electrode and the movable electrode are bare over the substrate;

a sacrificial layer wherein;

the sacrificial layer is removed by etching to expose the fixed electrode and the movable electrode with respect to the substrate, and the sacrificial layer is arranged between the substrate and the fixed electrode and the movable electrode, the substrate being on a first side on the sacrificial layer, and the fixed electrode and the moveable electrode being on a second side of the sacrificial layer, the first side being a side opposite the second side; and

a first thickness of the sacrificial layer located in a first area of the fixed electrode is less than a second thickness of the sacrificial layer located in a second area of the movable electrode.