Laser marking techniques for bare semiconductor die
First Claim
Patent Images
1. A semiconductor chip marking method comprising:
- providing an energy beam having a predetermined frequency;
providing a substrate including circuitry on at least one surface thereof, said substrate substantially opaque to said predetermined frequency of said energy beam;
directing said energy beam onto another surface of said substrate;
forming a mark on said another surface of said substrate; and
placing a chip in a path of said energy beam.
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Accused Products
Abstract
A laser marking apparatus and method having an energy source which is not substantially transmissible through the substrate of a semiconductor chip, or the substrate of the semiconductor chip is substantially opaque to the energy source for marking the surface of a semiconductor chip, are described herein.
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Citations
61 Claims
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1. A semiconductor chip marking method comprising:
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providing an energy beam having a predetermined frequency;
providing a substrate including circuitry on at least one surface thereof, said substrate substantially opaque to said predetermined frequency of said energy beam;
directing said energy beam onto another surface of said substrate;
forming a mark on said another surface of said substrate; and
placing a chip in a path of said energy beam. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 50)
translating said energy beam to mark said chip.
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3. The method of claim 1, further comprising:
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fixing a source of said energy beam; and
translating said energy beam to mark said chip.
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4. The method of claim 1, further comprising:
translating a source of said energy beam.
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5. The method of claim 1, further comprising:
inspecting the quality of said mark.
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6. The method of claim 3, further comprising:
rejecting said chip if said mark is not within selected quality control parameters.
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7. The method of claim 1, further comprising:
injecting a coolant onto a surface of said substrate either during or immediately subsequent to said forming said mark.
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8. The method of claim 1, wherein:
said energy beam includes a laser beam.
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9. The method of claim 1, wherein said energy beam includes a focused light source.
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10. The method of claim 1, wherein:
said energy beam includes a radiant photon energy beam.
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50. The method of claim 4, wherein:
said energy beam includes a focused light source.
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11. A semiconductor chip marking method comprising:
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providing a radiant photon energy beam having a predetermined frequency;
providing a substrate having circuitry on at least one surface thereof, said substrate substantially opaque to said predetermined frequency of said radiant photon energy beam;
directing said radiant photon energy beam onto another surface of said substrate;
forming a mark on said another surface of said substrate; and
placing a chip in a path of said radiant photon energy beam. - View Dependent Claims (12, 13, 14, 15, 16, 17, 18, 19)
translating said radiant photon energy beam to mark said chip.
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13. The method of claim 11, further comprising:
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fixing a source of said radiant photon energy beam; and
translating said radiant photon energy beam to mark said chip.
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14. The method of claim 11, further comprising:
translating a source of said radiant photon energy beam.
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15. The method of claim 11, further comprising:
inspecting the quality of said mark.
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16. The method of claim 15, further comprising:
rejecting said chip if said mark is not within selected quality control parameters.
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17. The method of claim 11, further comprising:
injecting a coolant onto a surface of said substrate either during or immediately subsequent to said forming said mark.
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18. The method of claim 11, wherein:
said radiant photon energy beam includes a laser beam.
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19. The method of claim 11, wherein said radiant photon energy beam includes a focused light source.
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20. A semiconductor chip marking method comprising:
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providing a substrate formed of a material;
providing an energy beam having a predetermined frequency substantially nontransmissible through said material of said substrate;
directing said energy beam onto a surface of said substrate; and
forming a mark on said surface of said substrate. - View Dependent Claims (21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
placing a chip in a path of said energy beam.
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22. The method of claim 21, further comprising:
translating said energy beam to mark said chip.
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23. The method of claim 21, further comprising:
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fixing a source of said energy beam; and
translating said energy beam to mark said chip.
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24. The method of claim 20, further comprising:
translating a source of said energy beam.
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25. The method of claim 21, further comprising:
inspecting the quality of said mark.
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26. The method of claim 25, further comprising:
rejecting said chip if said mark is not within selected quality control parameters.
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27. The method of claim 21, further comprising:
injecting a coolant onto said surface of said substrate either during or immediately subsequent to said forming said mark.
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28. The method of claim 20, wherein said energy beam includes a laser beam.
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29. The method of claim 20, wherein:
said energy beam includes a focused light source.
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30. The method of claim 20, wherein:
said energy beam includes a radiant photon energy beam.
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31. A semiconductor chip marking method comprising:
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providing a radiant photon energy beam having a predetermined frequency;
providing a substrate of a material substantially opaque to said predetermined frequency of said radiant photon energy beam;
directing the radiant photon energy beam onto a surface of said substrate; and
forming a mark on said surface of said substrate. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40)
placing a chip in a path of said radiant photon energy beam.
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33. The method of claim 32, further comprising:
translating said radiant photon energy beam to mark said chip.
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34. The method of claim 31, further comprising:
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fixing a source of said radiant photon energy beam; and
translating said radiant photon energy beam to mark said chip.
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35. The method of claim 31, further comprising:
translating a source of said radiant photon energy beam.
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36. The method of claim 32, further comprising:
inspecting the quality of said mark.
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37. The method of claim 36, further comprising:
rejecting said chip if said mark is not within selected quality control parameters.
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38. The method of claim 32, further comprising:
injecting a coolant onto said surface of said substrate either during or immediately subsequent to said forming said mark.
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39. The method of claim 31, wherein:
said radiant photon energy beam includes a laser beam.
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40. The method of claim 31, wherein:
said radiant photon energy beam includes a focused light source.
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41. A semiconductor chip marking method comprising:
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providing an energy beam;
configuring said energy beam to have a predetermined frequency;
providing a substrate comprised of a material substantially opaque to said predetermined frequency of said energy beam, said substrate having circuitry;
channeling said energy beam onto a surface of said substrate;
forming a mark on said surface of said substrate; and
preventing substantial damage to said circuitry of said substrate by said energy beam by said material of said substrate being substantially opaque to said predetermined frequency of said energy beam. - View Dependent Claims (42, 43, 44, 45, 46, 47, 48, 49, 51)
placing a chip in a path of said energy beam.
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43. The method of claim 42, further comprising:
translating said energy beam to mark said chip.
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44. The method of claim 41, further comprising:
translating a source of said energy beam to mark said chip.
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45. The method of claim 41, further comprising:
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fixing a source of said energy beam; and
translating said energy beam to mark said chip.
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46. The method of claim 45, further comprising:
inspecting the quality of said mark.
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47. The method of claim 46, further comprising:
rejecting said chip if said mark is not within selected quality control parameters.
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48. The method of claim 42, further comprising:
injecting a coolant onto said surface of said substrate either during or immediately subsequent to said forming said mark.
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49. The method of claim 41, wherein:
said energy beam includes a laser beam.
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51. The method of claim 41, wherein:
said energy beam includes a radiant photon energy beam.
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52. A semiconductor chip marking method comprising:
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providing radiant photon energy beam;
configuring said radiant photon energy beam to have a predetermined frequency;
providing a substrate comprising a material through which said predetermined frequency of said radiant photon energy beam is substantially not transmissible, said substrate having circuitry;
channeling said radiant photon energy beam onto a surface of said substrate;
forming a mark on said surface of said substrate; and
preventing substantial damage to said circuitry of said substrate by said radiant photon energy beam from said substrate not substantially transmitting said predetermined frequency of said radiant photon energy beam therethrough. - View Dependent Claims (53, 54, 55, 56, 57, 58, 59, 60, 61)
placing a chip in a path of said radiant photon energy beam.
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54. The method of claim 53, further comprising:
translating said radiant photon energy beam to mark said chip.
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55. The method of claim 52, further comprising:
translating a source of said radiant photon energy beam to mark said chip.
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56. The method of claim 52, further comprising:
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fixing a source of said radiant photon energy beam; and
translating said radiant photon energy beam to mark said chip.
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57. The method of claim 52, further comprising:
inspecting the quality of said mark.
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58. The method of claim 57, further comprising:
rejecting said chip if said mark is not within selected quality control parameters.
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59. The method of claim 52, further comprising:
injecting a coolant onto said surface of said substrate either during or immediately subsequent to said forming said mark.
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60. The method of claim 52, wherein:
said radiant photon energy beam includes a laser beam.
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61. The method of claim 52, wherein:
said radiant photon energy beam includes a focused light source.
Specification