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Semiconductor device and process for producing the same

  • US 6,680,541 B2
  • Filed: 01/18/2002
  • Issued: 01/20/2004
  • Est. Priority Date: 01/18/2000
  • Status: Expired due to Term
First Claim
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1. A semiconductor device including one or more intermetal insulating films, each intermetal insulating if film containing at least silicon atoms, oxygen atoms, and carbon atoms with the number ratio of oxygen atom to silicon atom being 1.5 or more and the number ratio of carbon atom to silicon atom being 1 to 2, and having a shrinkage of 14% or has in the film thickness direction at a time of oxidation, said shrinkage being measured after treating a surface of the film with an oxygen-plasma treatment under a pressure of 1 torr or more so as to decompose organic components below the film surface exposed to the treatment.

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